SI1551DL-T1-E3 Vishay, SI1551DL-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI1551DL-T1-E3
• Description: MOSFET N/P-CH 20V SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1551DL-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.9 Ohm @ 290mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 290mA, 410mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 4.5V
• Power - Max: 270mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 1.9 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.29 A @ N Channel or 0.41 A @ P Channel
• Power Dissipation: 270 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 300mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 1.9ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1551DL-T1-E3TR

Notes
a.
b.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
www.vishay.com
Si1551DL
Vishay Siliconix
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate Threshold Voltage
Gate Body Leakage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On State Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Forward Transconductance
Diode Forward Voltage
Diode Forward Voltage
Dynamic
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate-Source Charge
Gate Drain Charge
Gate-Drain Charge
Turn On Delay Time
Turn-On Delay Time
Rise Time
Rise Time
Turn Off Delay Time
Turn-Off Delay Time
Fall Time
Fall Time
Source-Drain
Source-Drain
Reverse Recovery Time
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
b
Parameter
a
a
a
a
a
a
a
a
J
= 25_C UNLESS OTHERWISE NOTED)
Symbol
V
V
r
r
I
I
DS(
DS(on)
t
t
I
I
t
t
I
I
GS(th)
GS(th)
D(
D(on)
V
V
Q
Q
Q
Q
d( ff)
d(off)
d(
d(on)
GSS
GSS
DSS
DSS
g
g
Q
Q
t
t
SD
SD
t
t
t
t
rr
f
fs
gs
gd
r
f
f
g
g
d
)
)
)
V
V
V
DS
I
I
D
D
DS
I
V
D
V
^ −0.5 A, V
^ 0.5 A, V
DS
= −10 V, V
DS
^ 0.5 A, V
= 10 V, V
I
I
F
V
V
V
V
F
V
= −20 V, V
V
V
V
10 V V
= 20 V, V
= −0.23 A, di/dt = 100 A/ms
V
V
V
V
V
V
DS
GS
GS
GS
I
V
= 0.23 A, di/dt = 100 A/ms
V
V
DS
V
I
S
V
V
DS
DS
DS
GS
S
DS
DS
DS
DD
DS
GS
GS
DD
DD
DS
= −0.23 A, V
= 0.23 A, V
p −5 V, V
= −4.5 V, I
= −2.7 V, I
= −2.5 V, I
= −10 V, I
= V
= 0 V V
= 0 V, V
w 5 V, V
= V
= −20 V, V
= 4.5 V, I
= −10 V, R
= 10 V, I
= 20 V, V
= 2.7 V, I
= 2.5 V, I
= 10 V, R
= 10 V, R
N-Channel
N-Channel
P-Channel
N-Channel
P-Channel
Test Condition
GS
GS
GS
GEN
GEN
GEN
10 V R
GS
GS
GS
, I
= −4.5 V, I
, I
= 4.5 V, I
GS
GS
= 0 V, T
D
= 4.5 V, R
= −4.5 V, R
= 4.5 V, R
D
= 0 V, T
D
D
GS
GS
D
D
D
D
4 5 V I
= −250 mA
D
D
GS
GS
= 250 mA
L
L
GS
= 0.29 A
= −0.41 A
GS
L
= "12 V
= "12 V
= 0.29 A
= −0.41 A
= −0.25 A
= −0.25 A
= 0.1 A
= 0.1 A
= 20 W
= 20 W
= 4.5 V
= −4.5 V
= 20 W
= 0 V
= 0 V
= 0 V
= 0 V
20 W
J
D
J
D
= 85_C
= 0.29 A
= 85_C
g
g
= −0.41 A
g
g
= 6 W
= 6 W
= 6 W
0 41 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min
−0.6
−1.0
0.6
0.6
S-42353—Rev. C, 20-Dec-04
0.850
Typ
1.55
1.23
−0.8
0.72
0.52
0.22
0.13
0.14
0.11
2.8
3.0
1.4
0.3
0.8
0.8
7.5
8.5
23
30
20
10
15
12
20
25
Document Number: 71255
"100
"100
Max
0.995
1.600
1.800
−1.5
−1.2
1.5
1.9
3.7
4.2
1.2
1.5
1.8
−1
−5
40
15
60
40
20
17
30
24
40
40
1
5
Unit
nA
nA
mA
mA
nC
nC
ns
ns
W
W
V
V
A
A
S
S
V
V