SI1026X-T1-E3 Vishay, SI1026X-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI1026X-T1-E3
• Description: MOSFET P-CH DUAL 60V SOT563F
• Manufacturer: Vishay

Specifications of SI1026X-T1-E3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 305mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 30pF @ 25V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-6, SOT-563F, SOT-666
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 500mA
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 3ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI1026X-T1-E3TR

Si1026X
Vishay Siliconix
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS (T
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Time
Turn-Off Time
b
b, c
a
a
a
a
J
= 25 °C, unless otherwise noted)
Symbol
R
V
I
I
I
C
V
D(on)
DS(on)
V
C
GS(th)
Q
Q
C
t
t
GSS
DSS
g
Q
(on)
(off)
DS
SD
oss
iss
rss
gd
fs
gs
g
V
V
I
D
DS
GS
V
= 200 mA, V
DS
= 10 V, I
= 10 V, I
V
V
V
= 60 V, V
V
V
V
V
V
V
V
V
DS
V
GS
V
DS
GS
DS
DS
DS
DD
DS
GS
DS
DS
GS
Test Conditions
= V
= 4.5 V, I
= 10 V, I
= 10 V, I
= 0 V, V
= 10 V, V
= 7.5 V, V
= 30 V, R
= 0 V, V
= 0 V, I
= 60 V, V
= 25 V, V
= 0 V, I
D
D
f = 1 MHz
GS
= 500 mA, T
= 250 mA, V
GEN
GS
, I
= 0 V, T
D
S
GS
D
D
D
GS
D
= 10 V, R
GS
= 200 mA
= 0.25 mA
L
GS
= 500 mA
= 200 mA
GS
GS
= 200 mA
= 10 µA
= ± 10 V
= 150 
= ± 5 V
= 4.5 V
= 10 V
= 0 V
= 0 V,
J
J
GS
= 85 °C
= 125 °C
g
= 4.5 V
= 10 
Min.
500
800
60
1
Typ.
200
600
120
225
30
15
20
6
3
S10-2432-Rev. D, 25-Oct-10
Document Number: 71434
± 150
Max.
± 50
1.40
2.50
1.40
2.5
3.0
10
1
Unit
mA
mS
nA
µA
pC
pF
ns

V
V