NTHD4502NT1G ON Semiconductor, NTHD4502NT1G Datasheet

NTHD4502NT1G

Manufacturer Part Number

NTHD4502NT1G

Description

MOSFET 2N-CH 30V 2.9A CHIPFET

Manufacturer

ON Semiconductor

Datasheet

1.NTHD4502NT1G.pdf (6 pages)

Specifications of NTHD4502NT1G

Fet Type

2 N-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

85 mOhm @ 2.9A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

2.2A

Vgs(th) (max) @ Id

3V @ 250µA

Gate Charge (qg) @ Vgs

7nC @ 10V

Input Capacitance (ciss) @ Vds

140pF @ 15V

Power - Max

640mW

Mounting Type

Surface Mount

Package / Case

8-ChipFET™

Configuration

Dual Dual Drain

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.085 Ohm @ 10 V

Gate Charge Qg

3.6 nC

Forward Transconductance Gfs (max / Min)

3.8 S

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

2.9 A

Power Dissipation

1130 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

NTHD4502NT1GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTHD4502NT1G

Manufacturer:

NXP

Quantity:

36 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

NTHD4502NT1G

Manufacturer:

ON/安森美

Quantity:

20 000

Current page: 1 of 6
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NTHD4502N

Power MOSFET

30 V, 3.9 A, Dual N−Channel ChipFETt

Features

•

Applications

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq

2. Surface Mounted on FR4 Board using the minimum recommended pad size

3. ESD Rating Information: HBM Class 0.

November, 2005 − Rev. 5

MAXIMUM RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain

Current (Note 1)

Power Dissipation

(Note 1)

Continuous Drain

Current (Note 2)

Power Dissipation

(Note 2)

Pulsed Drain Current

ESD Capability

(Note 3)

Operating Junction and Storage Temperature

Source Current (Body Diode)

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

Ideal Device for Applications Where Board Space is at a Premium.

Applications Where Heat Transfer is Required.

Computing and Portable Equipment

Planar Technology Device Offers Low R

Leadless ChipFET Package has 40% Smaller Footprint than TSOP−6.

ChipFET Package Exhibits Excellent Thermal Capabilities. Ideal for

Pb−Free Package is Available

DC−DC Buck or Boost Converters

Low Side Switching

Optimized for Battery and Low Side Switching Applications in

[1 oz] including traces).

(Cu area = 0.214 in sq).

Parameter

Steady

t ≤ 5 s

State

= 25°C unless otherwise noted)

C = 100 pF,

= 1500 W

= 10 ms

= 25°C

= 85°C

= 25°C

= 85°C

= 25°C

DS(on)

Symbol

ESD−

HBM

DSS

STG

and Fast Switching Speed

−55 to

Value

1.13

0.64

±20

125

150

260

2.9

2.1

3.9

2.1

2.2

1.6

2.5

Unit

°C

†For information on tape and reel specifications,

NTHD4502NT1

NTHD4502NT1G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

CONNECTIONS

(BR)DSS

30 V

Device

ORDERING INFORMATION

, G

C5 = Specific Device Code

http://onsemi.com

= Month Code

= Pb−Free Package

110 mW @ 4.5 V

N−Channel MOSFET

80 mW @ 10 V

(Pb−Free)

Package

ChipFET

DS(on)

, D

Publication Order Number:

TYP

CASE 1206A

MARKING

DIAGRAM

ChipFET

STYLE 2

3000/Tape & Reel

, S

Shipping

NTHD4502N/D

3.9 A

MAX

†

Related parts for NTHD4502NT1G

NTHD4502NT1G Summary of contents

Page 1

... HBM ° − 150 STG I 2 °C T 260 L NTHD4502NT1 NTHD4502NT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com V R TYP I MAX (BR)DSS DS(on 3.9 A 110 mW @ 4.5 V ...

Page 2

THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient – Steady State (Note 4) Junction−to−Ambient – t ≤ (Note 4) Junction−to−Ambient – Steady State (Note 5) 4. Surface Mounted on FR4 Board using pad size (Cu area = 1.127 ...

Page 3

ELECTRICAL CHARACTERISTICS Parameter DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge SWITCHING CHARACTERISTICS (Note 7) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time ...

Page 4

4.5 & 4.2 V resp 25° DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.3 0.25 0.2 0.15 0.1 ...

Page 5

ISS 200 C RSS 100 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 100 t d(off) ...

Page 6

... SCALE 20:1 0.026 Basic *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ChipFET is a trademark of Vishay Siliconix. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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