NTHD4502NT1G ON Semiconductor, NTHD4502NT1G Datasheet
NTHD4502NT1G
Specifications of NTHD4502NT1G
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NTHD4502NT1G Summary of contents
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... HBM ° − 150 STG I 2 °C T 260 L NTHD4502NT1 NTHD4502NT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com V R TYP I MAX (BR)DSS DS(on 3.9 A 110 mW @ 4.5 V ...
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THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient – Steady State (Note 4) Junction−to−Ambient – t ≤ (Note 4) Junction−to−Ambient – Steady State (Note 5) 4. Surface Mounted on FR4 Board using pad size (Cu area = 1.127 ...
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ELECTRICAL CHARACTERISTICS Parameter DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge SWITCHING CHARACTERISTICS (Note 7) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time ...
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4.5 & 4.2 V resp 25° DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.3 0.25 0.2 0.15 0.1 ...
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ISS 200 C RSS 100 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 100 t d(off) ...
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... SCALE 20:1 0.026 Basic *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ChipFET is a trademark of Vishay Siliconix. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...