AO4807 Alpha & Omega Semiconductor Inc, AO4807 Datasheet - Page 3

MOSFET DUAL P-CH -30V -6A 8-SOIC

AO4807

Manufacturer Part Number
AO4807
Description
MOSFET DUAL P-CH -30V -6A 8-SOIC
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AO4807

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
35 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
2.4V @ 250µA
Gate Charge (qg) @ Vgs
18.5nC @ 10V
Input Capacitance (ciss) @ Vds
920pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1057-2

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Rev 5: Jan 2010
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
35
30
25
20
15
10
5
0
50
45
40
35
30
25
20
15
10
80
60
40
20
0
0
0
2
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 3: On-Resistance vs. Drain Current and
-10V
Fig 1: On-Region Characteristics (Note E)
1
5
4
-6V
Gate Voltage (Note E)
2
-V
-5V
-V
V
DS
(Note E)
V
GS
-I
GS
D
GS
(Volts)
10
=-10V
(Volts)
(A)
6
=-4.5V
3
15
I
-4.5V
D
8
=-6A
V
4
125°C
25°C
-3.5V
GS
-4V
www.aosmd.com
=-3V
20
10
5
30
25
20
15
10
1.8
1.6
1.4
1.2
0.8
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
5
0
1
1
0
Figure 4: On-Resistance vs. Junction Temperature
40
V
Figure 2: Transfer Characteristics (Note E)
0.0
DS
1.5
Figure 6: Body-Diode Characteristics (Note E)
=-5V
25
0.2
2
125°C
50
125°C
Temperature (°C)
2.5
V
I
0.4
D
-V
GS
=-6A
75
(Note E)
GS
=-10V
-V
(Volts)
3
SD
0.6
(Volts)
100
3.5
0.8
125
25°C
25°C
V
I
4
D
GS
=-5A
17
=-4.5V
10
18
1.0
5
2
150
0
4.5
Page 3 of 6
AO4807
175
1.2
5

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