AO6602 Alpha & Omega Semiconductor Inc, AO6602 Datasheet - Page 7

• Manufacturer Part Number: AO6602
• Description: MOSFET N/P-CH COMPL 30V 6-TSOP
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AO6602

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 75 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.1A, 2.7A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 8.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 240pF @ 15V
• Power - Max: 1.15W
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1077-2

Rev 5: Mar 2011
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
200
180
160
140
120
100
9
6
3
0
80
60
300
260
220
180
140
100
60
0
0
-10V
2
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 3: On-Resistance vs. Drain Current and
Fig 1: On-Region Characteristics (Note E)
1
25° C
2
4
V
V
-8V
-6V
GS
GS
Gate Voltage (Note E)
=-4.5V
=-10V
2
-V
4
-5V
DS
-V
(Volts)
(Note E)
-I
GS
D
6
(A)
(Volts)
125° C
3
6
V
GS
-4.5V
8
-4V
=-3.5V
8
I
4
D
=-2.7A
www.aosmd.com
10
10
5
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
10
1.6
1.4
1.2
0.8
8
6
4
2
0
1
0.5
0
Figure 4: On-Resistance vs. Junction Temperature
V
40
DS
0.0
1
Figure 2: Transfer Characteristics (Note E)
=-5V
25
Figure 6: Body-Diode Characteristics (Note E)
1.5
125° C
0.2
50
125° C
2
Temperature (° C)
0.4
2.5
V
I
-V
D
GS
=-2.7A
75
(Note E)
GS
=-10V
-V
(Volts)
3
SD
0.6
100
(Volts)
3.5
0.8
25° C
4
V
I
125
D
25° C
GS
=-2A
=-4.5V
4.5
17
10
18
1.0
150
5
2
0
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AO6602
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5.5
175
1.2