NTZD3154NT1G ON Semiconductor, NTZD3154NT1G Datasheet
NTZD3154NT1G
Specifications of NTZD3154NT1G
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NTZD3154NT1G Summary of contents
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NTZD3154N Small Signal MOSFET 20 V, 540 mA, Dual N−Channel Features • Low R Improving System Efficiency DS(on) • Low Threshold Voltage • Small Footprint 1.6 x 1.6 mm • ESD Protected Gate • These are Pb−Free Devices Applications • ...
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ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Tem- perature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES AND ...
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TYPICAL PERFORMANCE CURVES 1.2 5.5 V 1 0 1.0 V ...
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... GATE RESISTANCE (W) G Figure 9. Resistive Switching Time Variation versus Gate Resistance ORDERING INFORMATION Device NTZD3154NT1G NTZD3154NT5G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/ 25°C unless otherwise noted) ...
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... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...