SSM6P36FE(TE85L,F) Toshiba, SSM6P36FE(TE85L,F) Datasheet - Page 4

• Manufacturer Part Number: SSM6P36FE(TE85L,F)
• Description: MOSFET DUAL P-CH 20V .33A ES6
• Manufacturer: Toshiba

Specifications of SSM6P36FE(TE85L,F)

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.31 Ohm @ 100mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 330mA
• Vgs(th) (max) @ Id: 1V @ 1mA
• Gate Charge (qg) @ Vgs: 1.2nC @ 4V
• Input Capacitance (ciss) @ Vds: 43pF @ 10V
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: ES6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SSM6P36FE(TE85LF)TR

1000
300
100
100
30
10
50
30
10
5
3
1
-0.1
-8
-6
-4
-2
-1
0
0
Common Source
V DS = -3 V
Ta = 25°C
Common Source
Ta = 25°C
f = 1 MHz
V GS = 0 V
Common Source
I D = -0.33 A
Ta = 25°C
Drain-source voltage V
V DD =-10V
Total Gate Charge Qg (nC)
Dynamic Input Characteristic
Drain current I
-10
-1
1
|Y
C – V
fs
| – I
V DD = - 16 V
DS
D
D
-10
-100
(mA)
DS
2
C oss
C rss
(V)
C iss
-1000
-100
3
4
*:Total Rating
10000
1000
1000
100
100
0.1
10
10
250
200
150
100
150
1
0
0
-40
-1
t on
G
t f
t r
Common Source
V GS = 0 V
t off
Mounted on FR4 board.
(25.4mm × 25.4mm × 1.6mm , Cu Pad : 0.135 mm
-20
0.2
Drain-source voltage V
S
Ambient temperature Ta (°C)
D
Ta =100 °C
0
I
DR
Drain current I
20
0.4
-10
I
DR
P
40
t – I
D
* – Ta
– V
0.6
60
D
DS
−25 °C
80
D
-100
0.8
DS
Common Source
V DD = -10 V
V GS = 0 to -2.5 V
Ta = 25 °C
R G = 50Ω
25 °C
SSM6P36FE
100
(mA)
120
(V)
1.0
2008-06-05
2
140
× 6)
-1000
1.2
160