SSM6L36FE(TE85L,F) Toshiba, SSM6L36FE(TE85L,F) Datasheet - Page 7

• Manufacturer Part Number: SSM6L36FE(TE85L,F)
• Description: MOSFET N-CH/P-CH 20V .5A ES6
• Manufacturer: Toshiba

Specifications of SSM6L36FE(TE85L,F)

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 630 mOhm @ 200mA, 5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 500mA, 330mA
• Vgs(th) (max) @ Id: 1V @ 1mA
• Gate Charge (qg) @ Vgs: 1.23nC @ 4V
• Input Capacitance (ciss) @ Vds: 46pF @ 10V
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: ES6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SSM6L36FE(TE85LF)TR

Q2 (P-ch MOSFET)
1000
300
100
100
30
10
50
30
10
5
3
1
-0.1
-8
-6
-4
-2
-1
0
0
Common Source
V DS = -3 V
Ta = 25°C
Common Source
Ta = 25°C
f = 1 MHz
V GS = 0 V
Common Source
I D = -0.33 A
Ta = 25°C
Drain-source voltage V
V DD =-10V
Total Gate Charge Qg (nC)
Dynamic Input Characteristic
Drain current I
-10
-1
1
|Y
C – V
fs
| – I
V DD = - 16 V
DS
D
D
-10
-100
(mA)
DS
2
C oss
C rss
(V)
C iss
-1000
-100
3
7
10000
1000
1000
100
100
0.1
10
10
1
0
-1
t on
G
t f
t r
Common Source
V GS = 0 V
t off
0.2
Drain-source voltage V
S
D
Ta =100 °C
I
DR
Drain current I
0.4
-10
I
DR
t – I
– V
0.6
D
DS
−25 °C
D
-100
0.8
DS
Common Source
V DD = -10 V
V GS = 0 to -2.5 V
Ta = 25 °C
R G = 50Ω
25 °C
SSM6L36FE
(mA)
(V)
1.0
2008-06-05
-1000
1.2