IRF7307 International Rectifier, IRF7307 Datasheet - Page 2

• Manufacturer Part Number: IRF7307
• Description: MOSFET N+P 20V 4.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7307

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.2A, 4.3A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 660pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7307

Electrical Characteristics @ T
IRF7307
Source-Drain Ratings and Characteristics
Notes:
V
R
V
g
I
Q
Q
Q
t
t
t
t
C
C
C
I
L
L
I
I
V
t
Q
t
DSS
d(on)
r
d(off)
f
GSS
S
SM
rr
on
V
fs
D
S
(BR)DSS
DS(ON)
GS(th)
iss
oss
rss
g
gs
gd
SD
rr
Repetitive rating; pulse width limited by
(BR)DSS
N-Channel I
P-Channel I
max. junction temperature. ( See fig. 23 )
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Turn-On Time
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Internal Drain Inductace
Internal Source Inductance
SD
SD
-2.2A, di/dt
2.6A, di/dt
Parameter
Parameter
100A/µs, V
50A/µs, V
DD
J
DD
= 25°C (unless otherwise specified)
V
V
(BR)DSS
(BR)DSS
N-Ch 20
P-Ch -20
N-Ch — 0.044 —
P-Ch — -0.012 —
N-Ch
P-Ch
N-Ch 0.70
P-Ch -0.70 —
N-Ch 8.30
P-Ch 4.00
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-P
N-P
N-P
N-P
, T
, T
J
J
Min. Typ. Max. Units
Min. Typ. Max. Units
Intrinsic turn-on time is neglegible (turn-on is dominated by L
––
—
—
—
—
—
—
150°C
150°C
660
610
280
310
140
170
4.0
9.0
8.4
6.0
42
26
32
51
51
33
29
56
22
71
—
—
— 0.050
— 0.070
— 0.090
— 0.140
—
—
—
—
—
—
—
— ±100
—
—
—
—
—
—
—
—
—
—
—
—
-1.0
-2.5
-1.0
110
1.0
2.2
8.0
2.5
1.0
-25
3.3
9.0
-17
25
20
22
—
21
44
84
33
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Pulse width
V/°C
Surface mounted on FR-4 board, t
nC
nH
µA
pF
nC
ns
ns
V
V
S
A
V
N-Channel
V
R
P-Channel
V
R
Between lead tip
N-Channel
V
P-Channel
V
V
V
Reference to 25°C, I
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
V
V
V
N-Channel
I
P-Channel
I
and center of die contact
T
T
N-Channel
T
P-Channel
T
D
D
DD
DD
GS
GS
J
J
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
DS
DS
DS
DS
GS
D
D
J
J
= 2.6A, V
= -2.2A, V
= 25°C, I
= 25°C, I
= 25°C, I
= 25°C, I
= 3.8
= 4.5
= 10V, I
= -10V, I
= 0V, V
= 0V, V
= 0V, I
= 0V, I
= 4.5V, I
= 2.7V, I
= -4.5V, I
= -2.7V, I
= V
= V
= 15V, I
= -15V, I
= -16V, V
= 16V, V
= -16V, V
= ± 12V
= 16V, V
GS
GS
300µs; duty cycle
, I
, I
D
D
DS
DS
DS
F
F
D
D
D
D
S
S
DS
= 250µA
= -250µA
D
D
D
D
GS
GS
= 2.6A, di/dt = 100A/µs
= -2.2A, di/dt = 100A/µs
D
D
GS
GS
= 250µA
= -250µA
= 2.6A, R
= 1.8A, V
= -1.8A, V
Conditions
= 2.6A
= 16V, V
= 2.6A
= 2.2A
= -2.2A
= -2.2A, R
= 15V, ƒ = 1.0MHz
= -15V, ƒ = 1.0MHz
= -16V, V
= -2.2A
= -1.8A
= 0V
= 0V, T
= 0V,
= 0V, T
D
D
Conditions
= 1mA
= -1mA
GS
GS
G
J
GS
J
GS
G
= 125°C
= 6.0
= 125°C
= 0V
= 4.5V
= 6.0 ,
= 0V
= -4.5V
2%.
S
+L
10sec.
D
)