IRF7325TRPBF International Rectifier, IRF7325TRPBF Datasheet
IRF7325TRPBF
Specifications of IRF7325TRPBF
IRF7325TRPBF
IRF7325TRPBFTR
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IRF7325TRPBF Summary of contents
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... Available in Tape & Reel Lead-Free Description ® New P-Channel HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...
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IRF7325PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...
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VGS TOP -10V -7.0V -4.5V -3.0V -2.5V -1.8V -1.5V BOTTOM -1. -1.2V 20µs PULSE WIDTH 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 10 ° ...
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IRF7325PbF 3000 0V MHZ C iss = rss = C gd 2500 C oss = Ciss 2000 1500 1000 Coss ...
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T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 ...
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IRF7325PbF 0.05 0.04 0. -7.8A 0.02 0.01 0.0 2.0 4.0 6.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. Basic ...
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Temperature ( °C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com 100 -250µ 100 125 150 0.001 ...
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IRF7325PbF SO-8 Package Outline Dimensions are shown in millimeters (inches 0.25 [.010 NOT DIMENS IONING ...
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SO-8 Tape and Reel Dimensions are shown in millimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS ...