IRF7325TRPBF International Rectifier, IRF7325TRPBF Datasheet

IRF7325TRPBF

Manufacturer Part Number

IRF7325TRPBF

Description

MOSFET 2P-CH 12V 7.8A 8-SOIC

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF7325TRPBF.pdf (9 pages)

Specifications of IRF7325TRPBF

Fet Type

2 P-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

24 mOhm @ 7.8A, 4.5V

Drain To Source Voltage (vdss)

12V

Current - Continuous Drain (id) @ 25° C

7.8A

Vgs(th) (max) @ Id

900mV @ 250µA

Gate Charge (qg) @ Vgs

33nC @ 4.5V

Input Capacitance (ciss) @ Vds

2020pF @ 10V

Power - Max

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Configuration

Dual

Transistor Polarity

Dual P-Channel

Drain-source Breakdown Voltage

- 12 V

Gate-source Breakdown Voltage

8 V

Continuous Drain Current

- 7.8 A

Power Dissipation

2 W

Mounting Style

SMD/SMT

Gate Charge Qg

22 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRF7325PBFTR
IRF7325TRPBF
IRF7325TRPBFTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF7325TRPBF

Manufacturer:

Quantity:

3 134

Company:

Meier Automation Equipment Co., Limited

Part Number:

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Manufacturer:

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Company:

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IRF7325TRPBF

Quantity:

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Thermal Resistance

New P-Channel HEXFET

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance

per silicon area. This benefit, combined with the

ruggedized

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infrared, or wave soldering techniques.

Description

www.irf.com

Symbol

θJL

θJA

Trench Technology

Ultra Low On-Resistance

Dual P-Channel MOSFET

Low Profile (<1.8mm)

Available in Tape & Reel

Lead-Free

@ T

STG

= 70°C

= 25°C

= 70°C

device

Junction-to-Drain Lead

Junction-to-Ambient

Drain- Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Junction and Storage Temperature Range

design that HEXFET Power

power MOSFETs from

Parameter

@ -4.5V

-12V

DSS

Top View

Typ.

–––

HEXFET

IRF7325PbF

DS(on)

-55 to + 150

24@V

33@V

49@V

Max.

± 8.0

-7.8

-6.2

-12

-39

2.0

1.3

max (mW)

= -4.5V

= -2.5V

= -1.8V

Power MOSFET

Max.

62.5

SO-8

mW/°C

7.8A

6.2A

3.9A

Units

°C/W

°C

10/4/04

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IRF7325TRPBF Summary of contents

Page 1

... Available in Tape & Reel Lead-Free Description ® New P-Channel HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

IRF7325PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

Page 3

VGS TOP -10V -7.0V -4.5V -3.0V -2.5V -1.8V -1.5V BOTTOM -1. -1.2V 20µs PULSE WIDTH 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 10 ° ...

Page 4

IRF7325PbF 3000 0V MHZ C iss = rss = C gd 2500 C oss = Ciss 2000 1500 1000 Coss ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 ...

Page 6

IRF7325PbF 0.05 0.04 0. -7.8A 0.02 0.01 0.0 2.0 4.0 6.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. Basic ...

Page 7

Temperature ( °C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com 100 -250µ 100 125 150 0.001 ...

Page 8

IRF7325PbF SO-8 Package Outline Dimensions are shown in millimeters (inches 0.25 [.010 NOT DIMENS IONING ...

Page 9

SO-8 Tape and Reel Dimensions are shown in millimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS ...

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