IRF7304QTRPBF International Rectifier, IRF7304QTRPBF Datasheet

MOSFET P-CH DUAL 20V 8-SOIC

IRF7304QTRPBF

Manufacturer Part Number
IRF7304QTRPBF
Description
MOSFET P-CH DUAL 20V 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets
1.IRF7304QTRPBF.pdf (9 pages)
2.IRF7304.pdf (9 pages)

Specifications of IRF7304QTRPBF

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
90 mOhm @ 2.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.3A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 4.5V
Input Capacitance (ciss) @ Vds
610pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
P Channel
Continuous Drain Current Id
-4.7A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
90mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-700mV
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7304QTRPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRF7304QTRPBF
Manufacturer:
IR
Quantity:
20 000
HEXFET
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in an
application with dramatically reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques. Power dissipation of greater
than 0.8W is possible in a typical PCB mount application.
Thermal Resistance Ratings
Absolute Maximum Ratings
I
I
I
I
P
V
dv/dt
T
D
D
D
DM
R
J,
D
GS
@ T
@ T
@ T
T
Generation V Technology
Ultra Low On-Resistance
Dual P-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
@T
JA
STG
A
A
A
A
= 25°C
= 25°C
= 70°C
= 25°C
®
Power MOSFET
10 Sec. Pulsed Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Parameter
Parameter
GS
GS
@ -4.5V
@ -4.5V
GS
@ -4.5V
G 2
G 1
S 2
S 1
1
2
3
4
T o p V iew
8
7
6
5
Typ.
–––
D 1
D 1
D 2
D 2
-55 to + 150
Max.
0.016
-4.7
-4.3
-3.4
-5.0
±12
-17
2.0
R
IRF7304
DS(on)
Max.
V
62.5
DSS
PD - 9.1240C
S O -8
= 0.090
= -20V
Units
°C/W
Units
W/°C
V/ns
°C
A
W
V
8/25/97

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IRF7304QTRPBF Summary of contents

Page 1

... Dynamic dv/dt Rating Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications ...

Page 2

IRF7304 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS TOP - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1. .5V 2 0µ LSE W IDTH ° ...

Page 4

IRF7304 0V iss oss ...

Page 5

T , Case Temperature C Fig 9. Maximum Drain Current Vs. Ambient Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 ...

Page 6

IRF7304 Charge Fig 12a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K .2 F 12V .3 F D.U. -3mA Current Sampling ...

Page 7

Peak Diode Recovery dv/dt Test Circuit + D.U Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive Period P.W. D.U.T. I Waveform SD Reverse Recovery ...

Page 8

IRF7304 Package Outline SO8 Outline 0.25 (.010 0.25 ...

Page 9

Tape & Reel Information SO8 Dimensions are shown in millimeters (inches ...

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