IRF7306TRPBF International Rectifier, IRF7306TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7306TRPBF
• Description: MOSFET 2P-CH 30V 3.6A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7306TRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 440pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 3.6 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 16.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7306PBFTR

100
1000
0.1
10
800
600
400
200
1
0.0
0
1
-V
-V
0.3
SD
DS
V
C
C
C
, Source-to-Drain Voltage (V)
GS
iss
rss
oss
, Drain-to-Source Voltage (V)
C
C
C
T = 150°C
J
iss
oss
rss
= 0V,
= C
= C
= C
0.6
gs
ds
gd
+ C
+ C
10
gd
gd
f = 1MHz
0.9
T = 25°C
J
, C
ds
SHORTED
1.2
V
GS
= 0V
1.5
100
A
A
100
20
16
12
10
8
4
0
1
0
1
I
V
D
T
T
Single Pulse
DS
C
J
= -3.0A
= 25 C
= 150 C
= -24V
OPERATION IN THIS AREA LIMITED
-V
DS
Q , Total Gate Charge (nC)
°
5
°
G
, Drain-to-Source Voltage (V)
10
BY R
10
DS(on)
FOR TEST CIRCUIT
15
SEE FIGURE 12
100us
1ms
10ms
20
100
25
A