IRF7331TRPBF International Rectifier, IRF7331TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7331TRPBF
• Description: MOSFET 2N-CH 20V 7A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7331TRPBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1340pF @ 16V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 30 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 7 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 13 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7331PBFTR; IRF7331TRPBF; IRF7331TRPBFTR

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1000
100
100
0.1
10
10
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
1
1
0.1
1.5
TOP
BOTTOM
V
DS
V
VGS
7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
1.5V
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
T = 25 C
2.0
J
1
1.50V
°
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
J
DS
2.5
10
= 15V
T = 150 C
J
°
°
100
3.0
Fig 2. Typical Output Characteristics
100
2.0
1.5
1.0
0.5
0.0
10
1
Fig 4. Normalized On-Resistance
0.1
-60 -40 -20
TOP
BOTTOM
I =
D
7.0A
V
DS
VGS
7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
1.5V
T , Junction Temperature ( C)
Vs. Temperature
J
, Drain-to-Source Voltage (V)
0
1
20
1.50V
40 60
20µs PULSE WIDTH
T = 150 C
J
80 100 120 140 160
10
°
V
°
GS
=
4.5V
3
100