QS6M4TR Rohm Semiconductor, QS6M4TR Datasheet - Page 4

• Manufacturer Part Number: QS6M4TR
• Description: MOSFET N+P 30,20V 1.5A TSMT6
• Manufacturer: Rohm Semiconductor

Specifications of QS6M4TR

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 230 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 30V, 20V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Gate Charge (qg) @ Vgs: 1.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 80pF @ 10V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: TSMT6
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.23 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 30 V @ N Channel or 20 V @ P Channel
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1.5 A
• Power Dissipation: 1250 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Transistors
N-ch
Electrical characteristic curves
0.001
1000
0.01
100
0.1
10
10
0.1
0.01
1
1
10
0.0
Fig.4 Typical Transfer Characteristics
0.01
1
Fig.1 Typical Capacitance
DRAIN-SOURCE VOLTAGE : V
GATE-SOURCE VOLTAGE : V
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Fig.7 Static Drain-Source
0.5
vs. Drain-Source Voltage
DRAIN CURRENT : I
0.1
C
On-State Resistance
vs. Drain Current (Ι)
C
oss
rss
0.1
1.0
C
iss
1
1.5
1
10
V
Pulsed
D
Ta=25°C
f=1MHz
V
2.0
V
Pulsed
DS
GS
(A)
GS
GS
=10V
=0V
DS
=4.5V
(V)
(A)
100
2.5
10
1000
100
10
0.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
0.01
1
1
0.01
Fig.2 Switching Characteristics
0
t
Fig.5 Static Drain-Source
d (on)
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
GATE-SOURCE VOLTAGE : V
t
Fig.8 Static Drain-Source
r
1
t
f
t
DRAIN CURRENT : I
d (off)
DRAIN CURRENT : I
2
On-State Resistance vs.
Gate-Source Voltage
On-State Resistance
vs. Drain Current (ΙΙ)
0.1
3
0.1
I
I
D
D
=1.5A
=0.75A
4
5
6
1
1
7
D
D
Ta=25°C
V
V
R
Pulsed
(A)
V
Pulsed
Ta=25°C
Pulsed
(A)
DD
GS
G
GS
=10Ω
8
=15V
=4.5V
=4.0V
GS
9
(V)
10
10
10
0.01
0.1
10
0.1
10
6
5
4
3
2
1
0
1
1
0.01
0.0
Fig.3 Dynamic Input Characteristics
0
Ta=25°C
V
I
R
Pulsed
D
SOURCE-DRAIN VOLTAGE : V
DD
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
=1.5A
G
TOTAL GATE CHARGE : Qg (nC)
Fig.6 Source Current vs.
Fig.9 Static Drain-Source
=10Ω
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
=15V
DRAIN CURRENT : I
0.5
Source-Drain Voltage
On-State Resistance
vs. Drain Current (ΙΙΙ)
0.5
0.1
Rev.B
1.0
QS6M4
1.0
1
1.5
D
V
Pulsed
(A)
V
Pulsed
GS
GS
SD
=2.5V
=0V
(V)
4/5
2.0
1.5
10