UM6K1NTN Rohm Semiconductor, UM6K1NTN Datasheet - Page 3

• Manufacturer Part Number: UM6K1NTN
• Description: MOSFET 2N-CH 30V .1A SOT-363
• Manufacturer: Rohm Semiconductor

Specifications of UM6K1NTN

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100mA
• Vgs(th) (max) @ Id: 1.5V @ 100µA
• Input Capacitance (ciss) @ Vds: 13pF @ 5V
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Umt6: Module Configuration
• Transistor Polarity: Dual N Channel
• Continuous Drain Current Id: 10mA
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 8ohm
• Rds(on) Test Voltage Vgs: 4V
• Threshold: RoHS Compliant
• Configuration: Dual
• Resistance Drain-source Rds (on): 8 Ohm @ 4 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.1 A
• Power Dissipation: 150 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: UM6K1NTNTR; UM6K1NTR; UM6K1NTR

Transistors
Fig.7 Static Drain-Source On-State
Switching characteristics measurement circuit
200m
100m
0.5m
0.2m
0.1m
50m
20m
10m
5m
2m
1m
Fig.10 Reverse Drain Current vs.
0
9
8
7
6
5
4
3
2
1
0
−50
Resistance vs. Channel Temperature
Fig.13
SOURCE-DRAIN VOLTAGE : V
V
CHANNEL TEMPERATURE : Tch ( °C)
−25
GS
Source-Drain Voltage ( )
=4V
R
G
I
0
D
0.5
Switching Time Test Circuit
=100mA
25
V
GS
0V
50
D.U.T.
1
I
75
D
=50mA
100 125
I
Ta=25 °C
Pulsed
D
SD
V
Pulsed
( V)
GS
=4V
1.5
150
R
V
DD
L
V
DS
0.5
50
20
10
5
2
1
0.1
Fig.11 Typical Capacitance vs.
Fig.8 Forward Transfer Admittance vs.
0.005
0.002
0.001
0.05
0.02
0.01
0.5
0.2
0.1
DRAIN-SOURCE VOLTAGE : V
0.2
0.0001
Drain-Source Voltage
0.0002 0.0005 0.001 0.002
Drain Current
Ta=−25 °C
0.5
125 °C
DRAIN CURRENT : I
25 °C
75 °C
1
2
0.005 0.01 0.02
5
V
V
10
GS
DS
D
0.05
Ta =25 °C
f=1MH
V
Pulsed
DS
( A)
C
C
C
GS
20
oss
iss
rss
( V)
0.1 0.2
V
Pulsed
=0V
Fig.14
DS
t
d(on)
Z
=3V
10%
50
t
50%
on
0.5
10%
t
r
Switching Time Waveforms
Pulse Width
1000
90%
500
200
100
50
20
10
200m
100m
0.5m
0.2m
0.1m
5
2
50m
20m
10m
0.1
5m
2m
1m
Fig.12 Switching Characteristics
Fig.9 Reverse Drain Current vs.
t
0
t
0.2
d(on)
r
t
SOURCE-DRAIN VOLTAGE : V
d(off)
DRAIN CURRENT : I
0.5
Source-Drain Voltage ( )
90%
t
f
1
t
d(off)
0.5
Rev.B
2
t
off
t
5
f
UM6K1N
50%
Ta=125 °C
10
D
1
10%
90%
−25 °C
( mA)
75 °C
25 °C
20
Ta =25 °C
V
V
R
V
Pulsed
SD
DD
GS
G
50
GS
=10 Ω
=5V
=5V
( V)
=0V
3/3
1.5
100