ZXMD63C02XTA Diodes Zetex, ZXMD63C02XTA Datasheet - Page 8

MOSFET N+P 20V 1.7A 8-MSOP

ZXMD63C02XTA

Manufacturer Part Number
ZXMD63C02XTA
Description
MOSFET N+P 20V 1.7A 8-MSOP
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMD63C02XTA

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
130 mOhm @ 1.7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.4A, 1.7A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
6nC @ 4.5V
Input Capacitance (ciss) @ Vds
350pF @ 15V
Power - Max
1.04W
Mounting Type
Surface Mount
Package / Case
8-MSOP, Micro8™, 8-uMAX, 8-uSOP,
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMD63C02XTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMD63C02XTA
Manufacturer:
ZETEX
Quantity:
20 000
ZXMD63C02X
P-CHANNEL
ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE A - JUNE 1999
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance (3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge(3)
SYMBOL MIN.
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
(BR)DSS
GS(th)
DS(on)
fs
iss
oss
rss
SD
g
gs
gd
rr
8
amb
-20
-0.7
1.3
= 25°C unless otherwise stated).
TYP.
290
120
50
3.4
9.6
16.4
20.4
21.7
9.6
MAX.
-1
0.27
0.40
5.25
1.0
2.25
-0.95
100
UNIT CONDITIONS.
V
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
A
I
V
V
I
V
V
V
V
V
f=1MHz
V
R
(Refer to test
circuit)
V
I
(Refer to test
circuit)
T
V
T
di/dt= 100A/ s
D
D
D
j
j
DS
GS
GS
GS
GS
DS
DS
DD
G
DS
GS
=-250 A, V
=-250 A, V
=-1.2A
=25°C, I
=25°C, I
=6.0 , R
=-20V, V
= 12V, V
=-4.5V, I
=-2.7V, I
=-10V,I
=-15 V, V
=-16V,V
=0V
=-10V, I
S
F
D
=-1.2A,
=-1.2A,
D
GS
=-0.6A
D
D
D
GS
=8.3
GS
GS
=-1.2A
DS
DS
=-1.2A
=-0.6A
=-4.5V,
=0V
=0V,
=0V
=
=0V

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