SI4904DY-T1-E3 Vishay, SI4904DY-T1-E3 Datasheet - Page 5

MOSFET N-CH DUAL 40V 8A 8-SOIC

SI4904DY-T1-E3

Manufacturer Part Number
SI4904DY-T1-E3
Description
MOSFET N-CH DUAL 40V 8A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheets

Specifications of SI4904DY-T1-E3

Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
16 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
85nC @ 10V
Input Capacitance (ciss) @ Vds
2390pF @ 20V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N Channel
Continuous Drain Current Id
8A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
19mohm
Rds(on) Test Voltage Vgs
16V
Threshold Voltage Vgs Typ
2V
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.016 Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
8 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4904DY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4904DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 951
Part Number:
SI4904DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73793
S09-0540-Rev. C, 06-Apr-09
4.0
3.2
2.4
1.6
0.8
0.0
0
Power Derating, Junction-to-Foot
25
D
T
is based on T
C
– Case Temperature (°C)
50
75
J(max)
12
10
8
6
4
2
0
0
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
Package Limited
25
125
T
C
50
Current Derating*
– Case Temperature (°C)
150
75
100
125
1.5
1.2
0.9
0.6
0.3
0.0
0
150
Power Derating, Junction-to-Ambient
25
T
A
– Ambient Temperature (°C)
50
Vishay Siliconix
75
Si4904DY
100
www.vishay.com
125
150
5

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