ZXMHN6A07T8TA Diodes Zetex, ZXMHN6A07T8TA Datasheet

MOSFET N-CHAN 60V 1.6A SOT223-8

ZXMHN6A07T8TA

Manufacturer Part Number
ZXMHN6A07T8TA
Description
MOSFET N-CHAN 60V 1.6A SOT223-8
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMHN6A07T8TA

Fet Type
4 N-Channel (H-Bridge)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
300 mOhm @ 1.8A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
1.4A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
3.2nC @ 10V
Input Capacitance (ciss) @ Vds
166pF @ 40V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
SOT-223 (8 leads), SM8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMHN6A07T8TA
60V N-CHANNEL MOSFET H-BRIDGE
SUMMARY
V
DESCRIPTION
This new generation of trench MOSFETs from Zetex
utilizes a unique structure that combines the benefits of
low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage,
power management applications.
FEATURES
·
·
·
·
·
APPLICATIONS
·
ORDERING INFORMATION
DEVICE MARKING
·
ISSUE 2 - MAY 2004
DEVICE
ZXMHN6 A0 7 T8 TA
ZXMHN6 A0 7 T8 TC
(BR)DSS
Compact package
Low on state losses
Low drive requirements
Operates up to 60V
1 Amp continuous rating
Motor control
ZXMH
N6A07
= 60V : R
DS(on)
REEL
SIZE
13”
7”
= 0.3 ; I
WIDTH
12mm
12mm
TAPE
D
QUANTITY PER
= 1.6A
4,000 units
1,000 units
REEL
1
ZXMHN6A07T8
S E M I C O N D U C T O R S
TOP VIEW
PINOUT
SM8

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ZXMHN6A07T8TA Summary of contents

Page 1

N-CHANNEL MOSFET H-BRIDGE SUMMARY V = 60V : (BR)DSS DS(on) DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. ...

Page 2

ZXMHN6A07T8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-source voltage Gate-source voltage Continuous drain current ( (c) Pulsed drain current Continuous source current ...

Page 3

ISSUE 2 - MAY 2004 ZXMHN6A07T8 CHARACTERISTICS ...

Page 4

ZXMHN6A07T8 ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage Static drain-source on-state (1 ) resistance ( Forward transconductance (3 ) DYNAMIC Input capacitance Output capacitance Reverse ...

Page 5

ISSUE 2 - MAY 2004 TYPICAL CHARACTERISTICS 5 ZXMHN6A07T8 ...

Page 6

ZXMHN6A07T8 TYPICAL CHARACTERISTICS 6 ISSUE 2 - MAY 2004 ...

Page 7

PACKAGE OUTLINE Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters DIM Min Max Typ. Min 0.067 A1 0.02 0.1 - 0.008 0.004 0 0.24 ...

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