SI5504DC-T1-E3 Vishay, SI5504DC-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI5504DC-T1-E3
• Description: MOSFET N/P-CH 30V CHIPFET 1206-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5504DC-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.9A, 2.1A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 7.5nC @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.085 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.9 A @ N Channel or 2.1 A @ P Channel
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 2.1A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 290mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI5504DC-T1-E3TR

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71056
S10-0547-Rev. C, 08-Mar-10
10
0.4
0.3
0.2
0.1
0.0
8
6
4
2
0
0.0
0.01
0.1
0
2
1
V
10
GS
-4
0.05
= 10 V thru 7 V
Duty Cycle = 0.5
0.2
0.1
0.02
0.5
On-Resistance vs. Drain Current
V
Single Pulse
V
GS
2
DS
= 4.5 V
Output Characteristics
- Drain-to-Source Voltage (V)
1.0
I
D
- Drain Current (A)
4
1.5
10
-3
6
Normalized Thermal Transient Impedance, Junction-to-Foot
V
2.0
GS
= 10 V
5 V
4 V
3 V
8
6 V
2.5
3.0
Square Wave Pulse Duration (s)
10
10
-2
400
320
240
160
10
10
80
8
6
4
2
0
0
-1
0
0
C
rss
1
6
V
V
GS
Transfer Characteristics
DS
C
oss
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
2
Capacitance
12
1
C
iss
Vishay Siliconix
3
T
18
C
Si5504DC
25 °C
= - 55 °C
4
www.vishay.com
24
125 °C
5
10
30
6
5