SI4963BDY-T1-E3 Vishay, SI4963BDY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4963BDY-T1-E3
• Description: MOSFET P-CH DUAL 20V 4.9A 8-SOIC
• Manufacturer: Vishay

Specifications of SI4963BDY-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 32 mOhm @ 6.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.9A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.032 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4.9 A
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 6.5A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 50mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: -1.4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4963BDY-T1-E3TR

Si4963BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
www.vishay.com
4
- 0.1
- 0.2
0.5
0.4
0.3
0.2
0.1
0.0
0.01
0.1
- 50
2
1
10 -
4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
I
Threshold Voltage
T
D
J
= 250 µA
– Temperature (°C)
10 -
25
3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
10
10 -
100
1
0.1
2
Limited by R
* V
Limited
I
125
D(on)
DS
Single Pulse
T
> minimum V
A
V
= 25 °C
Square Wave Pulse Duration (s)
150
DS
DS(on)
- Drain-to-Source Voltage (V)
Safe Operating Area
10 -
1
1
*
BV
GS
DSS
at which R
Limited
DS(on)
10
1
30
25
20
15
10
5
0
is specified
10 -
I
DM
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
2
Limited
10 -
100
1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
Single Pulse Power
P
DM
JM
-
1
T
t
A
1
Time (s)
= P
S09-0704-Rev. B, 27-Apr-09
t
2
DM
Document Number: 72753
Z
thJA
10
thJA
100
t
t
1
2
(t)
= 91 °C/W
100
600
600