SI7923DN-T1-E3 Vishay, SI7923DN-T1-E3 Datasheet - Page 5
![MOSFET DUAL P-CH 30V 1212-8](/photos/5/42/54273/pkg_5882_sml.jpg)
SI7923DN-T1-E3
Manufacturer Part Number
SI7923DN-T1-E3
Description
MOSFET DUAL P-CH 30V 1212-8
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI7923DN-T1-E3.pdf
(6 pages)
Specifications of SI7923DN-T1-E3
Transistor Polarity
P-Channel
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
47 mOhm @ 6.4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4.3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
21nC @ 10V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8 Dual
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.047 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.3 A
Power Dissipation
1300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-4.3A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
38mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7923DN-T1-E3TR
Available stocks
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72622.
Document Number: 72622
S-83050-Rev. C, 29-Dec-08
0.01
0.1
2
1
10
-4
Duty Cycle = 0.5
0.2
Single Pulse
0.02
0.05
0.1
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
Square Wave Pulse Duration (s)
10
-2
10
-1
Vishay Siliconix
Si7923DN
www.vishay.com
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