ZXMC3A16DN8TC Diodes Zetex, ZXMC3A16DN8TC Datasheet - Page 6

• Manufacturer Part Number: ZXMC3A16DN8TC
• Description: MOSFET N/P-CHAN DUAL 30V 8SOIC
• Manufacturer: Diodes Zetex

Specifications of ZXMC3A16DN8TC

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.9A, 4.1A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 17.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 796pF @ 25V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMC3A16DN8TC; ZXMC3A16DN8TCTR

ZXMC3A16DN8
0.01
0.01
100
0.1
0.1
0.1
10
10
10
1
1
1
0.1
1
On-Resistance v Drain Current
Typical Transfer Characteristics
T = 25°C
0.1
T = 150°C
V
V
DS
Output Characteristics
GS
2V
I
Drain-Source Voltage (V)
D
Gate-Source Voltage (V)
Drain Current (A)
2
10V
V
1
GS
1
N-CHANNEL TYPICAL CHARACTERISTICS
2.5V
4V
T = 25°C
V
3
DS
3V
T = 25°C
= 10V
10
10
4V
1.5V
2.5V
3V
2V
V
10V
GS
4
6
0.01
Source-Drain Diode Forward Voltage
100
0.1
0.1
1.6
1.4
1.2
1.0
0.8
0.6
0.4
10
10
1
1
Normalised Curves v Temperature
-50
0.2
T = 150°C
0.1
Tj Junction Temperature (°C)
V
V
0.4
DS
Output Characteristics
SD
Drain-Source Voltage (V)
Source-Drain Voltage (V)
0
T = 150°C
0.6
10V
1
V
I
D
V
I
0.8
50
GS
D
= 250uA
GS
4V
= 1.5A
= V
ISSUE 1 - OCTOBER 2005
= 10V
T = 25°C
DS
1.0
100
10
3.5V
1.2
R
V
2.5V
1.5V
DS(on)
2V
1V
GS(th)
3V
V
GS
150
1.4