SI4948BEY-T1-E3 Vishay, SI4948BEY-T1-E3 Datasheet - Page 4

MOSFET P-CH DUAL 60V 2.4A 8-SOIC

SI4948BEY-T1-E3

Manufacturer Part Number
SI4948BEY-T1-E3
Description
MOSFET P-CH DUAL 60V 2.4A 8-SOIC
Manufacturer
Vishay
Datasheet

Specifications of SI4948BEY-T1-E3

Transistor Polarity
P-Channel
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
120 mOhm @ 3.1A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
2.4A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 10V
Power - Max
1.4W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.12 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.4 A
Power Dissipation
1400 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-3.1A
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
100mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4948BEY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4948BEY-T1-E3
Manufacturer:
MICRON
Quantity:
2 140
Part Number:
SI4948BEY-T1-E3
Manufacturer:
VISHAY
Quantity:
150
Part Number:
SI4948BEY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4948BEY-T1-E3
0
Company:
Part Number:
SI4948BEY-T1-E3
Quantity:
33 750
Si4948BEY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
0.6
0.4
0.2
0.0
- 50
0.01
0.1
2
1
10 -
- 25
0.05
Duty Cycle = 0.5
0.02
4
0.2
0.1
I
D
0
= 250 µA
Threshold Voltage
T
J
25
- Temperature (°C)
10 -
Single Pulse
3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
100
0.01
100
0.1
10 -
10
1
0.1
2
125
* V
Safe Operating Area, Junction-to-Case
GS
by R
Limited
Limited
I
> minimum V
150
D(on)
V
DS
DS(on)*
Square Wave Pulse Duration (s)
Single Pulse
- Drain-to-Source Voltage (V)
T
10 -
A
1
= 25 °C
1
GS
at which R
BVDSS Limited
I
DM
DS(on)
10
50
40
30
20
10
Limited
1
0
10 -
is specified
3
10 -
2
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
100
10
Single Pulse Power
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10 -
P
DM
JM
1
-
Time (s)
T
t
A
1
S09-1002-Rev. B, 01-Jun-09
= P
t
1
2
Document Number: 72847
DM
Z
thJA
thJA
100
t
t
1
2
(t)
10
= 85 °C/W
100
600
600

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