SI7911DN-T1-E3 Vishay, SI7911DN-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI7911DN-T1-E3
• Description: MOSFET DUAL P-CH 20V 1212-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7911DN-T1-E3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 51 mOhm @ 5.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.2A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 4.5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8 Dual
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -5.7A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 94mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7911DN-T1-E3TR

TYPICAL CHARACTERISTICS T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
Document Number: 72340
S-81544-Rev. C, 07-Jul-08
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http://www.vishay.com/ppg?72340.
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-4
Duty Cycle = 0.5
0.2
Single Pulse
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0.05
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Normalized Thermal Transient Impedance, Junction-to-Case
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-3
A
= 25 °C, unless otherwise noted
Square Wave Pulse Duration (s)
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-2
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-1
Vishay Siliconix
Si7911DN
www.vishay.com
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