SI7911DN-T1-E3 Vishay, SI7911DN-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI7911DN-T1-E3
• Description: MOSFET DUAL P-CH 20V 1212-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7911DN-T1-E3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 51 mOhm @ 5.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.2A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 4.5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8 Dual
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -5.7A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 94mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7911DN-T1-E3TR

Si7911DN
Vishay Siliconix
TYPICAL CHARACTERISTICS T
www.vishay.com
4
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
0.01
- 50
0.1
2
1
10
-4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
Threshold Voltage
T
J
I
D
2 5
- Temperature (°C)
10
= 250 µA
Single Pulse
-3
5 0
Normalized Thermal Transient Impedance, Junction-to-Ambient
7 5
0.01
A
100
0.1
10
100
= 25 °C, unless otherwise noted
1
10
0.1
-2
Safe Operating Area, Junction-to-Ambient
* V
Limited by R
125
GS
Limited
I
D(on)
> minimum V
Single Pulse
T
V
A
150
DS
= 25 °C
Square Wave Pulse Duration (s)
DS(on)
- Drain-to-Source Voltage (V)
10
1
-1
*
GS
BV
at which R
DSS
Limited
DS(on)
10
I
DM
30
25
20
15
10
1
5
0
0.001
Limited
is specified
P(t) = 0.001
P(t) = 0.01
P(t) = 0.0001
P(t) = 1
P(t) = 0.1
P(t) = 10
DC
Single Pulse Power, Junction-to-Ambient
0.01
100
1 0
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0.1
P
DM
JM
- T
Time (s)
t
A
1
= P
1
t
S-81544-Rev. C, 07-Jul-08
2
Document Number: 72340
DM
Z
th J A
th J A
100
t
t
1
2
(t )
10
= 75 °C/W
100
600
600