SI9933BDY-T1-E3 Vishay, SI9933BDY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI9933BDY-T1-E3
• Description: MOSFET DUAL P-CH 20V 3.6A 8-SOIC
• Manufacturer: Vishay

Specifications of SI9933BDY-T1-E3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 4.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 9nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.06 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI9933BDY-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72748
S09-1925-Rev. C, 28-Sep-09
0.20
0.16
0.12
0.08
0.04
0.00
30
10
5
4
3
2
1
0
1
0.0
0
0
V
GS
V
I
D
DS
Source-Drain Diode Forward Voltage
= 4.7 A
1
= 2.5 V
0.2
On-Resistance vs. Drain Current
= 10 V
4
V
2
SD
Q
0.4
g
- Source-to-Drain Voltage (V)
- Total Gate Charge (nC)
I
D
3
- Drain Current (A)
Gate Charge
8
T
0.6
J
= 150 °C
4
0.8
12
5
V
1.0
GS
T
J
6
= 4.5 V
= 25 °C
16
1.2
7
20
1.4
8
1000
0.20
0.16
0.12
0.08
0.04
0.00
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
V
I
rss
D
- 25
GS
= 4.7 A
I
D
= 10 V
1
4
= 1 A
V
V
T
GS
DS
C
0
J
oss
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
Capacitance
25
8
2
C
iss
50
Vishay Siliconix
Si9933BDY
I
12
D
3
75
= 4.7 A
www.vishay.com
100
16
4
125
150
20
5
3