SI5904DC-T1-E3 Vishay, SI5904DC-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI5904DC-T1-E3
• Description: MOSFET DUAL N-CH 20V 3.1A 1206-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5904DC-T1-E3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.1A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 4.2A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 134mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5904DC-T1-E3TR

Si5904DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71065.
www.vishay.com
4
- 0.2
- 0.4
- 0.6
0.4
0.2
0.0
- 50
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
- 25
0.05
0.2
0.02
0.02
0.05
0.2
0.1
0.1
Duty Cycle = 0.5
Duty Cycle = 0.5
Single Pulse
0
Single Pulse
Threshold Voltage
I
D
T
J
= 250 µA
25
- Temperature (°C)
10
-3
50
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
Normalized Thermal Transient Impedance, Junction-to-Foot
100
10
-2
125
150
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
-2
10
-1
50
40
30
20
10
10
1
0
10
-1
-4
10
-3
10
10
Single Pulse Power
-2
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
10
- T
Time (s)
-1
1
t
A
1
S10-0548-Rev. D, 08-Mar-10
= P
t
2
Document Number: 71065
DM
1
Z
thJA
thJA
100
t
t
1
2
(t)
= 90 °C/W
10
100
600
10
600