DMN5L06DMK-7 Diodes Inc, DMN5L06DMK-7 Datasheet
DMN5L06DMK-7
Manufacturer Part Number
DMN5L06DMK-7
Description
MOSFET DUAL N-CHAN 50V SOT-26
Manufacturer
Diodes Inc
Datasheet
1.DMN5L06DMK-7.pdf
(4 pages)
Specifications of DMN5L06DMK-7
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2 Ohm @ 50mA @ 5V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
305mA
Vgs(th) (max) @ Id
1V @ 250µA
Input Capacitance (ciss) @ Vds
50pF @ 25V
Power - Max
400mW
Mounting Type
Surface Mount
Package / Case
SOT-26
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2 Ohm @ 5 V
Drain-source Breakdown Voltage
50 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.305 A
Power Dissipation
400 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
DMN5L06DMKDITR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DMN5L06DMK-7
Manufacturer:
DIODES
Quantity:
3 000
Part Number:
DMN5L06DMK-7-F
Manufacturer:
DIODES/美台
Quantity:
20 000
Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Features
•
•
•
•
•
•
•
•
•
•
•
Notes:
DMN5L06DMK
Document number: DS30927 Rev. 4 - 2
Dual N-Channel MOSFET
Low On-Resistance
Very Low Gate Threshold Voltage (1.0V max)
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected up to 2kV
"Green" Device (Note 4)
Qualified to AEC-Q101 standards for High Reliability
ESD protected up 2kV
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
Characteristic
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
TOP VIEW
@T
@T
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
Pulsed (Note 3)
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
@ T
Continuous
C
BOTTOM VIEW
= 25°C
www.diodes.com
Symbol
R
SOT-26
BV
V
I
DS (ON)
I
I
D(ON)
C
1 of 4
|Y
V
C
C
GS(th)
DSS
GSS
oss
SD
rss
DSS
iss
fs
|
Mechanical Data
•
•
•
•
•
•
•
•
Symbol
Symbol
T
V
j
V
R
, T
P
DSS
GSS
I
θ JA
D
0.49
D
Min
200
Case: SOT-26
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.015 grams (approximate)
STG
0.5
0.5
50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Internal Schematic
D
S
2
TOP VIEW
2
Typ
G
G
1.4
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2
1
S
D
1
1
-65 to +150
Max
500
1.0
3.0
2.5
2.0
1.4
5.0
60
50
50
25
⎯
⎯
⎯
1
Value
Value
±20
305
800
400
313
50
Unit
mS
nA
μA
nA
nA
pF
pF
pF
V
V
Ω
A
V
V
V
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
DMN5L06DMK
GS
DS
GS
GS
GS
DS
GS
GS
GS
GS
DS
GS
DS
= 0V, I
= 50V, V
= ±12V, V
= ±10V, V
= ±5V, V
= V
= 1.8V, I
= 2.5V, I
= 5.0V, I
= 10V, V
=10V, I
= 0V, I
= 25V, V
Test Condition
GS
© Diodes Incorporated
September 2007
, I
°C/W
Unit
Unit
D
mW
S
mA
D
°C
D
V
V
= 10μA
= 115mA
GS
D
D
D
GS
DS
DS
= 0.2A
= 250μA
DS
DS
= 50mA
= 50mA
= 50mA
= 0V
= 0V
= 7.5V
= 0V
= 0V
= 0V
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DMN5L06DMK-7 Summary of contents
Page 1
... I C DSS ⎯ I GSS 0.49 V GS(th) ⎯ ⎯ (ON) ⎯ 0.5 I D(ON) 200 | 0 ⎯ C iss ⎯ C oss ⎯ C rss www.diodes.com DMN5L06DMK Value 50 ±20 305 800 Value 400 °C/W 313 -65 to +150 Typ Max Unit Test Condition ⎯ ⎯ 0V ⎯ 50V μ ± ...
Page 2
... DMN5L06DMK Document number: DS30927 Rev 100 125 150 Fig. 4 Static Drain-Source On-Resistance vs. Drain Current 1 V Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage www.diodes.com DMN5L06DMK V , GATE-SOURCE VOLTAGE (V) GS Fig. 2 Typical Transfer Characteristics I DRAIN CURRENT ( GATE SOURCE VOLTAGE (V) GS, September 2007 © Diodes Incorporated ...
Page 3
... Ambient Temperature 250 200 150 100 50 ° 556 C/W θ AMBIENT TEMPERATURE ( C) A Fig. 11 Derating Curve - Total DMN5L06DMK Document number: DS30927 Rev ° Fig.10 Forward Transfer Admittance vs. Drain Current 100 150 ° www.diodes.com DMN5L06DMK DRAIN CURRENT (A) D September 2007 © Diodes Incorporated ...
Page 4
... Ordering Information (Note 6) Part Number DMN5L06DMK-7 Notes: 6. For packaging details our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year 2006 Code T Month Jan Feb Code 1 2 Package Outline Dimensions Suggested Pad Layout Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein ...