DMN66D0LDW-7 Diodes Inc, DMN66D0LDW-7 Datasheet
DMN66D0LDW-7
Manufacturer Part Number
DMN66D0LDW-7
Description
MOSFET N-CH DUAL 115MA SOT-363
Manufacturer
Diodes Inc
Datasheet
1.DMN66D0LDW-7.pdf
(4 pages)
Specifications of DMN66D0LDW-7
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6 Ohm @ 115mA, 5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
115mA
Vgs(th) (max) @ Id
2V @ 250µA
Input Capacitance (ciss) @ Vds
23pF @ 25V
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Other names
DMN66D0LDWDITR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DMN66D0LDW-7
Manufacturer:
LSI
Quantity:
92
Part Number:
DMN66D0LDW-7
Manufacturer:
DIODES/美台
Quantity:
20 000
Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage (Note 1)
Drain Current (Note 1)
Total Power Dissipation
Derating above T
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Features
•
•
•
•
•
•
•
•
•
Notes:
DMN66D0LDW
Document number: DS31232 Rev. 4 - 2
Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
ESD Protected Gate, 1KV (HBM)
Lead Free/RoHS Compliant (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
2. No purposefully added lead.
3. Short duration pulse test used to minimize self-heating effect.
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
A
ESD PROTECTED, 1KV
= 25°C (Note 1)
Characteristic
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
@T
Continuous @ 100°C
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
@ T
@ T
@ T
@ T
TOP VIEW
Continuous
Continuous
C
C
j
j
= 25°C
= 125°C
= 25°C
= 125°C
Pulsed
www.diodes.com
SOT-363
Symbol
R
BV
V
t
t
DS (ON)
D(OFF)
I
C
D(ON)
I
C
1 of 4
GS(th)
C
g
DSS
GSS
oss
FS
DSS
iss
rss
Mechanical Data
Symbol
Symbol
•
•
•
•
•
•
•
•
•
T
V
V
j,
R
P
GSS
T
DSS
I
θ JA
D
Min
D
1.2
STG
60
80
Please click here to visit our online spice models database.
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Case: SOT-363
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
Internal Schematic
D
S
2
2
TOP VIEW
Typ
3.5
3.0
3.4
1.4
70
23
10
33
⎯
⎯
⎯
⎯
G
G
1
2
Max
500
1.0
2.0
⎯
±5
⎯
⎯
⎯
⎯
⎯
⎯
6
5
S
D
1
1
-55 to +150
Unit
mS
µA
μA
pF
pF
pF
ns
ns
Ω
V
V
Value
Value
±20
115
800
250
500
1.6
60
73
V
V
V
V
V
V
V
V
V
V
GS
DS
GS
DS
GS
GS
DS
DS
DD
GEN
= 0V, I
= 60V, V
= ±20V, V
= V
= 5.0V, I
= 10V, I
= 10V, I
= 25V, V
= 30V, I
= 10V
GS
, I
Test Condition
D
,
D
DMN66D0LDW
D
D
D
= 10μA
D
R
GS
GS
= 250μA
= 0.115A
DS
= 0.115A
= 0.115A, R
GEN
= 0.115A
= 0V
= 0V, f = 1.0MHz
= 0V
= 25Ω
© Diodes Incorporated
mW/°C
Units
Units
°C/W
mW
mA
°C
February 2008
V
V
L
= 150Ω,
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DMN66D0LDW-7 Summary of contents
Page 1
... GSS 1.2 V GS(th 25°C j ⎯ (ON 125° ⎯ C iss ⎯ C oss ⎯ C rss ⎯ t D(ON) ⎯ t D(OFF www.diodes.com DMN66D0LDW TOP VIEW Value Units 60 ±20 115 73 800 Value Units 250 1.6 mW/°C 500 °C/W -55 to +150 Typ Max Unit Test Condition ⎯ 70 ...
Page 2
... DMN66D0LDW Document number: DS31232 Rev 0 85°C 0.01 1 2.5 2.0 1.5 1.0 0.5 0 0.4 0.5 0.6 100 I = 250µ 100 125 150 www.diodes.com DMN66D0LDW Pulsed T = 150° 25° -55° GATE SOURCE VOLTAGE (V) GS Fig. 2 Typical Transfer Characteristics C iss C oss C rss 5 10 ...
Page 3
... V , SOURCE-DRAIN VOLTAGE (V) SD Fig. 7 Reverse Drain Current vs. Source-Drain Voltage Ordering Information (Note 4) Part Number DMN66D0LDW-7 Notes: 4. For packaging details our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information MN1 YM Date Code Key Year 2007 Code U Month Jan Feb ...
Page 4
... Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMN66D0LDW Document number: DS31232 Rev Dimensions Value (in mm IMPORTANT NOTICE LIFE SUPPORT www.diodes.com DMN66D0LDW 2.5 1.3 0.42 0.6 1.9 0.65 February 2008 © Diodes Incorporated ...