SI1035X-T1-E3 Vishay, SI1035X-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI1035X-T1-E3
• Description: MOSFET N/P-CH COMPL 20V SOT563F
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1035X-T1-E3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 180mA, 145mA
• Vgs(th) (max) @ Id: 400mV @ 250µA
• Gate Charge (qg) @ Vgs: 0.75nC @ 4.5V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-6, SOT-563F, SOT-666
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 200mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 8ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Power Dissipation Pd: 300mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI1035X-T1-E3TR

Si1035X
Vishay Siliconix
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS (T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State
Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Turn-Off Time
b
a
a
a
a
J
= 25 °C, unless otherwise noted)
Symbol
R
V
I
I
I
t
DS(on)
V
GS(th)
D(on)
Q
Q
t
GSS
DSS
OFF
g
Q
ON
SD
gd
fs
gs
g
V
I
D
DS
I
V
D
 - 150 mA, V
V
DS
V
 250 mA, V
= - 10 V, V
DS
DS
V
V
= 10 V, V
V
V
V
= - 16 V, V
V
V
V
V
V
V
V
GS
GS
I
= 16 V, V
V
DS
V
V
V
V
GS
DS
I
S
V
DS
V
DS
V
GS
GS
GS
S
DS
DS
DS
DS
DS
DD
DS
= - 150 mA, V
DS
DD
DS
= 150 mA, V
= - 4.5 V, I
= - 1.8 V, I
= - 10 V, I
= - 1.5 V, I
= - 2.5 V, I
= - 5 V, V
= V
= 0 V, V
= 0 V, V
= 4.5 V, I
= 2.5 V, I
= 1.8 V, I
= 10 V, I
= V
= 1.5 V, I
= - 16 V, V
= - 10 V, R
= 5 V, V
= 16 V, V
= 10 V, R
GS
N-Channel
P-Channel
N-Channel
P-Channel
GS
GS
Test Conditions
GEN
GEN
GS
GS
GS
= - 4.5 V, I
, I
= 4.5 V, I
, I
D
GS
GS
= 0 V, T
= 4.5 V, R
= - 4.5 V, R
D
= 0 V, T
D
D
D
D
D
D
D
GS
GS
D
D
D
= - 250 µA
= 250 µA
GS
= 200 mA
= - 150 mA
= 200 mA
= - 150 mA
= 175 mA
= 150 mA
= - 100 mA
L
= ± 2.8 V
= ± 4.5 V
GS
GS
= 125 mA
= 40 mA
= - 30 mA
L
GS
= 4.5 V
= - 4.5 V
= 47 
= 65 
= 0 V
= 0 V
= 0 V
= 0 V
D
J
D
J
= 150 mA
= 85 °C
= - 150 mA
= 85 °C
g
g
= 10 
= 10 
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
- 0.40
- 200
Min.
0.40
250
S10-2544-Rev. C, 08-Nov-10
± 0.5
± 0.5
± 1.5
± 1.0
1500
Typ.
750
150
225
450
0.5
0.4
- 1
75
Document Number: 71426
1
Max.
± 1.0
± 1.0
± 3.0
± 3.0
- 500
- 1.2
- 10
500
1.2
10
12
15
10
20
75
80
75
90
5
8
7
9
Unit
mA
µA
nA
µA
pC
ns

V
S
V