SI1016X-T1-GE3 Vishay, SI1016X-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI1016X-T1-GE3
• Description: MOSFET N/P-CH 20V SC89-6
• Manufacturer: Vishay

Specifications of SI1016X-T1-GE3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 485mA, 370mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 0.75nC @ 4.5V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-6, SOT-563F, SOT-666
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.7 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.485 A
• Power Dissipation: 280 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 485mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 410mohm
• Rds(on) Test Voltage Vgs: 6V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1016X-T1-GE3TR

N-CHANNEL TYPICAL CHARACTERISTICS (T
Document Number: 71168
S10-2432-Rev. E, 25-Oct-10
4.0
3.2
2.4
1.6
0.8
0.0
1.0
0.8
0.6
0.4
0.2
0.0
5
4
3
2
1
0
0.0
0
0.0
V
I
D
DS
= 250 mA
0.5
On-Resistance vs. Drain Current
200
= 10 V
V
DS
0.2
Output Characteristics
Q
- Drain-to-Source Voltage (V)
I
g
1.0
D
- Total Gate Charge (nC)
- Drain Current (mA)
Gate Charge
400
1.5
0.4
V
GS
V
GS
600
= 5 V thru 1.8 V
= 1.8 V
2.0
0.6
V
V
800
GS
GS
2.5
= 4.5 V
= 2.5 V
1 V
1000
3.0
0.8
A
= 25 °C, unless otherwise noted)
1200
1000
1.60
1.40
1.20
1.00
0.80
0.60
100
800
600
400
200
80
60
40
20
0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
- 25
C
0.5
is s
4
V
V
T
Transfer Characteristics
DS
GS
J
C
os s
0
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
Capacitance
1.0
8
T
2 5
C
25 °C
= - 55 °C
Vishay Siliconix
V
I
D
C
GS
5 0
= 350 mA
rss
1.5
12
= 4.5 V
V
f = 1 MHz
V
I
D
GS
7 5
125 °C
GS
Si1016X
= 150 mA
www.vishay.com
= 0 V
= 1.8 V
2.0
16
100
125
2.5
20
3