SI1016X-T1-GE3 Vishay, SI1016X-T1-GE3 Datasheet - Page 3
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SI1016X-T1-GE3
Manufacturer Part Number
SI1016X-T1-GE3
Description
MOSFET N/P-CH 20V SC89-6
Manufacturer
Vishay
Datasheet
1.SI1016X-T1-GE3.pdf
(8 pages)
Specifications of SI1016X-T1-GE3
Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
700 mOhm @ 600mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
485mA, 370mA
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
0.75nC @ 4.5V
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SC-89-6, SOT-563F, SOT-666
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.7 Ohm @ 4.5 V @ N Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 6 V
Continuous Drain Current
0.485 A
Power Dissipation
280 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
485mA
Drain Source Voltage Vds
20V
On Resistance Rds(on)
410mohm
Rds(on) Test Voltage Vgs
6V
Threshold Voltage Vgs Typ
1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1016X-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI1016X-T1-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
71 777
Part Number:
SI1016X-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
N-CHANNEL TYPICAL CHARACTERISTICS (T
Document Number: 71168
S10-2432-Rev. E, 25-Oct-10
4.0
3.2
2.4
1.6
0.8
0.0
1.0
0.8
0.6
0.4
0.2
0.0
5
4
3
2
1
0
0.0
0
0.0
V
I
D
DS
= 250 mA
0.5
On-Resistance vs. Drain Current
200
= 10 V
V
DS
0.2
Output Characteristics
Q
- Drain-to-Source Voltage (V)
I
g
1.0
D
- Total Gate Charge (nC)
- Drain Current (mA)
Gate Charge
400
1.5
0.4
V
GS
V
GS
600
= 5 V thru 1.8 V
= 1.8 V
2.0
0.6
V
V
800
GS
GS
2.5
= 4.5 V
= 2.5 V
1 V
1000
3.0
0.8
A
= 25 °C, unless otherwise noted)
1200
1000
1.60
1.40
1.20
1.00
0.80
0.60
100
800
600
400
200
80
60
40
20
0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
- 25
C
0.5
is s
4
V
V
T
Transfer Characteristics
DS
GS
J
C
os s
0
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
Capacitance
1.0
8
T
2 5
C
25 °C
= - 55 °C
Vishay Siliconix
V
I
D
C
GS
5 0
= 350 mA
rss
1.5
12
= 4.5 V
V
f = 1 MHz
V
I
D
GS
7 5
125 °C
GS
Si1016X
= 150 mA
www.vishay.com
= 0 V
= 1.8 V
2.0
16
100
125
2.5
20
3