DMN2004DWK-7 Diodes Inc, DMN2004DWK-7 Datasheet - Page 2

• Manufacturer Part Number: DMN2004DWK-7
• Description: MOSFET DUAL N-CHAN 20V SOT-363
• Manufacturer: Diodes Inc

Specifications of DMN2004DWK-7

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 540mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Input Capacitance (ciss) @ Vds: 150pF @ 16V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.55 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.54 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: DMN2004DWKDITR

DMN2004DWK
Document number: DS30935 Rev. 3 - 2
Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
Fig. 3 Gate Threshold Voltage vs. Channel Temperature
0
0
T , CHANNEL TEMPERATURE (°C)
ch
Fig. 1 Typical Output Characteristics
V , DRAIN-SOURCE VOLTAGE (V)
1
DS
I , DRAIN CURRENT (A)
D
2
3
4
5
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Fig. 4 Static Drain-Source On-Resistance Vs. Drain Current
0.1
1
Fig. 2
Reverse Drain Current vs. Source-Drain Voltage
V
GS
I DRAIN CURRENT (A)
, GATE-SOURCE VOLTAGE (V)
D ,
DMN2004DWK
© Diodes Incorporated
November 2007
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