MMBF5460LT1G ON Semiconductor, MMBF5460LT1G Datasheet

TRANS JFET SW P-CHAN 40V SOT23

MMBF5460LT1G

Manufacturer Part Number
MMBF5460LT1G
Description
TRANS JFET SW P-CHAN 40V SOT23
Manufacturer
ON Semiconductor
Datasheet

Specifications of MMBF5460LT1G

Current - Drain (idss) @ Vds (vgs=0)
1mA @ 15V
Fet Type
P-Channel
Voltage - Breakdown (v(br)gss)
40V
Voltage - Cutoff (vgs Off) @ Id
750mV @ 1µA
Input Capacitance (ciss) @ Vds
7pF @ 15V
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Power - Max
225mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MMBF5460LT1GOS
MMBF5460LT1GOS
MMBF5460LT1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMBF5460LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
MMBF5460LT1
JFET − General Purpose
Transistor
P−Channel
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 2
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Drain−Gate Voltage
Reverse Gate−Source Voltage
Forward Gate Current
Total Device Dissipation FR−5 Board,
(Note 1) T
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Pb−Free Package is Available
A
= 25°C
Characteristic
Rating
Symbol
Symbol
T
V
R
J
V
I
P
GSR
, T
GF
qJA
DG
D
stg
−55 to +150
Value
Max
225
556
1.8
40
40
10
1
mW/°C
mAdc
°C/W
Unit
Unit
Vdc
Vdc
mW
°C
†For information on tape and reel specifications,
MMBF5460LT1
MMBF5460LT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
Device
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
ORDERING INFORMATION
GATE
M6E = Device Code
M
G
MARKING DIAGRAM
3
http://onsemi.com
SOT−23 (TO−236)
1
= Date Code*
= Pb−Free Package
1
(Pb−Free)
Package
CASE 318
SOT−23
SOT−23
STYLE 10
M6E M G
2
Publication Order Number:
G
1 DRAIN
2 SOURCE
3
3,000 / Tape & Reel
3,000 / Tape & Reel
MMBF5460LT1/D
Shipping

Related parts for MMBF5460LT1G

MMBF5460LT1G Summary of contents

Page 1

... R 556 qJA ° −55 to +150 J stg MMBF5460LT1 MMBF5460LT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com 2 SOURCE 3 GATE 1 DRAIN SOT−23 (TO−236) ...

Page 2

ELECTRICAL CHARACTERISTICS (T Characteristic OFF CHARACTERISTICS Gate−Source Breakdown Voltage = 10 mAdc Gate Reverse Current ( Vdc Vdc 100°C) ...

Page 3

DRAIN CURRENT versus GATE SOURCE VOLTAGE 4.0 3.5 3.0 2 −55°C 2.0 A 25°C 1.5 125°C 1.0 0 0.2 0.4 0.6 0.8 1.0 1 GATE−SOURCE VOLTAGE (VOLTS) GS Figure 2.0 Volts ...

Page 4

I , DRAIN CURRENT (mA) D Figure 7. Output Resistance versus Drain Current 10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 ...

Page 5

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

Related keywords