MMBF5460LT1G ON Semiconductor, MMBF5460LT1G Datasheet
MMBF5460LT1G
Specifications of MMBF5460LT1G
MMBF5460LT1GOS
MMBF5460LT1GOSTR
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MMBF5460LT1G Summary of contents
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... R 556 qJA ° −55 to +150 J stg MMBF5460LT1 MMBF5460LT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com 2 SOURCE 3 GATE 1 DRAIN SOT−23 (TO−236) ...
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ELECTRICAL CHARACTERISTICS (T Characteristic OFF CHARACTERISTICS Gate−Source Breakdown Voltage = 10 mAdc Gate Reverse Current ( Vdc Vdc 100°C) ...
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DRAIN CURRENT versus GATE SOURCE VOLTAGE 4.0 3.5 3.0 2 −55°C 2.0 A 25°C 1.5 125°C 1.0 0 0.2 0.4 0.6 0.8 1.0 1 GATE−SOURCE VOLTAGE (VOLTS) GS Figure 2.0 Volts ...
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I , DRAIN CURRENT (mA) D Figure 7. Output Resistance versus Drain Current 10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 ...
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... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...