MMBFU310LT1 ON Semiconductor, MMBFU310LT1 Datasheet

MMBFU310LT1

Manufacturer Part Number

MMBFU310LT1

Description

JFET SS N-CHAN 25V SOT23

Manufacturer

ON Semiconductor

Datasheet

1.MMBFU310LT1G.pdf (4 pages)

Specifications of MMBFU310LT1

Current - Drain (idss) @ Vds (vgs=0)

24mA @ 10V

Drain To Source Voltage (vdss)

25V

Fet Type

N-Channel

Voltage - Breakdown (v(br)gss)

25V

Voltage - Cutoff (vgs Off) @ Id

2.5V @ 1nA

Input Capacitance (ciss) @ Vds

5pF @ 10V (VGS)

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Power - Max

225mW

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

MMBFU310LT1OSCT

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MMBFU310LT1

Manufacturer:

FAIRCHILD

Quantity:

2 099

Company:

Meier Automation Equipment Co., Limited

Part Number:

MMBFU310LT1

Manufacturer:

ON/安森美

Quantity:

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Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MMBFU310LT1G

Manufacturer:

ON Semiconductor

Quantity:

4 450

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MMBFU310LT1G

Manufacturer:

Quantity:

30 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

MMBFU310LT1G

Manufacturer:

ON/安森美

Quantity:

20 000

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MMBFU310LT1G

JFET Transistor

N−Channel

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0 0.75 0.062 in.

February, 2011 − Rev. 5

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

Drain−Source Voltage

Gate−Source Voltage

Gate Current

Total Device Dissipation FR− 5 Board

Thermal Resistance,

Junction and Storage Temperature

Compliant

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

(Note 1)

Derate above 25°C

Junction−to−Ambient

= 25°C

Rating

Symbol

, T

qJA

stg

−55 to +150

Value

225

556

1.8

mW/°C

mAdc

°C/W

Unit

Vdc

°C

†For information on tape and reel specifications,

MMBFU310LT1G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

Device

(Note: Microdot may be in either location)

ORDERING INFORMATION

GATE

M6C = Device Code

MARKING DIAGRAM

http://onsemi.com

= Date Code*

= Pb−Free Package

(Pb−Free)

M6C M G

Package

SOT−23

SOT−23 (TO−236AB)

Publication Order Number:

CASE 318−08

1 DRAIN

2 SOURCE

STYLE 10

3000 Tape & Reel

MMBFU310LT1/D

Shipping

†

Related parts for MMBFU310LT1

MMBFU310LT1 Summary of contents

Page 1

... ORDERING INFORMATION Device Package Shipping MMBFU310LT1G SOT−23 3000 Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MMBFU310LT1/D † ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Gate−Source Breakdown Voltage − −1.0 mAdc Gate 1 Leakage Current − −15 Vdc Gate 2 Leakage Current − −15 Vdc Gate Source Cutoff ...

Page 3

1.0 k GS(off GS(off) 100 0.01 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5 100 I , DRAIN CURRENT (mA) D Figure 3. Common−Source Output Admittance and ...

Page 4

... ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMBFU310LT1/D ...

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