2N5458 ON Semiconductor, 2N5458 Datasheet - Page 2

• Manufacturer Part Number: 2N5458
• Description: IC JFET N-CH SS GP 25V TO92
• Manufacturer: ON Semiconductor

Specifications of 2N5458

• Current - Drain (idss) @ Vds (vgs=0): 2mA @ 15V
• Drain To Source Voltage (vdss): 25V
• Fet Type: N-Channel
• Voltage - Breakdown (v(br)gss): 25V
• Voltage - Cutoff (vgs Off) @ Id: 1V @ 10nA
• Input Capacitance (ciss) @ Vds: 7pF @ 15V
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Power - Max: 310mW
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 2N5458OS

1. Pulse Width ≤ 630 ms, Duty Cycle ≤ 10%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Gate −Source Breakdown Voltage
Gate Reverse Current
Gate−Source Cutoff Voltage
Gate−Source Voltage
Zero−Gate−Voltage Drain Current (Note 1)
Forward Transfer Admittance (Note 1)
Output Admittance Common Source (Note 1)
Input Capacitance
Reverse Transfer Capacitance
(I
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
G
GS
GS
DS
DS
DS
DS
DS
DS
DS
DS
= −10 mAdc, V
= −15 Vdc, V
= −15 Vdc, V
= 15 Vdc, i
= 15 Vdc, i
= 15 Vdc, i
= 15 Vdc, V
= 15 Vdc, V
= 15 Vdc, V
= 15 Vdc, V
= 15 Vdc, V
D
D
D
GS
GS
GS
GS
GS
DS
= 10 nAdc)
= 100 mAdc)
= 200 mAdc)
DS
DS
= 0)
= 0, f = 1 kHz)
= 0, f = 1 kHz)
= 0, f = 1 kHz)
= 0, f = 1 kHz)
= 0)
= 0)
= 0, T
A
Characteristic
= 100°C)
(T
A
= 25°C unless otherwise noted)
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2
2N5457
2N5458
2N5457
2N5458
2N5457
2N5458
2N5457
2N5458
V
Symbol
V
(BR)GSS
I
|Y
GS(off)
V
I
|Y
C
C
GSS
DSS
GS
rss
os
iss
fs
|
|
1000
1500
−0.5
−1.0
Min
−25
1.0
2.0
−
−
−
−
−
−
−
3000
4000
−2.5
−3.5
Typ
3.0
6.0
4.5
1.5
10
−
−
−
−
−
−200
5000
5500
Max
- 1.0
−6.0
−7.0
5.0
9.0
7.0
3.0
50
−
−
−
mmhos
mmhos
mAdc
nAdc
Unit
Vdc
Vdc
Vdc
pF
pF