MGP15N40CLG ON Semiconductor, MGP15N40CLG Datasheet - Page 2

• Manufacturer Part Number: MGP15N40CLG
• Description: IGBT IGNIT N-CH 15A 410V T0220AB
• Manufacturer: ON Semiconductor

Specifications of MGP15N40CLG

• Voltage - Collector Emitter Breakdown (max): 440V
• Vce(on) (max) @ Vge, Ic: 2.25V @ 4V, 15A
• Current - Collector (ic) (max): 15A
• Power - Max: 150W
• Input Type: Logic
• Mounting Type: Through Hole
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Channel Type: N
• Configuration: Single
• Collector Current (dc) (max): 15A
• Package Type: TO-220AB
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 175C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant
• Other names: MGP15N40CLGOS

1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
*Maximum Value of Characteristic across Temperature Range.
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
Collector−Emitter Clamp Voltage
Zero Gate Voltage Collector Current
Reverse Collector−Emitter Leakage
Current
Reverse Collector−Emitter Clamp Voltage
Gate−Emitter Clamp Voltage
Gate−Emitter Leakage Current
Gate Resistor (Optional)
Gate Emitter Resistor
Gate Threshold Voltage
Threshold Temperature Coefficient (Neg)
Collector−to−Emitter On−Voltage
Single Pulse Collector−to−Emitter Avalanche Energy
Reverse Avalanche Energy
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
V
V
V
CC
CC
CC
= 50 V, V
= 50 V, V
= 100 V, V
Characteristic
GE
GE
GE
= 5.0 V, Pk I
= 5.0 V, Pk I
= 20 V, L = 3.0 mH, Pk I
L
L
Characteristic
= 17.4 A, L = 2.0 mH, Starting T
= 14.2 A, L = 2.0 mH, Starting T
Characteristic
B
Symbol
V
BV
V
BV
VCES(R)
L
MGP15N40CL, MGB15N40CL
I
I
I
R
CE(on)
GE(th)
GES
CES
ECS
R
= 25.8 A, Starting T
−
GE
CES
GES
G
http://onsemi.com
Test Conditions
V
V
I
I
V
V
I
I
V
I
C
C
G
V
V
C
I
CE
V
I
I
C
CE
C
GE
GE
C
C
TO−220
D
GE
GE
GE
= −75 mA
GE
= 1.0 mA,
= 2.0 mA
= 5.0 mA
= 10 mA
= 6.0 A,
2
= 10 A,
= 15 A,
= 350 V,
= −24 V
J
J
PAK (Note 1)
= 4.0 V
= 4.0 V
J
= 10 V
−
−
= V
−
2
= 0 V
= 25°C
= 150°C
4.0 V
= 25°C
CE
T
T
T
T
T
T
J
J
J
J
J
J
= −40°C to 150°C
= −40°C to 150°C
= −40°C to 150°C
= −40°C to 150°C
= −40°C to 150°C
= −40°C to 150°C
Temperature
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
Symbol
Symbol
J
J
J
J
J
J
J
J
J
J
J
J
J
J
J
J
J
J
J
J
J
E
(−55°C ≤ T
= 150°C
= −40°C
= 150°C
= −40°C
= 150°C
= −40°C
= 150°C
= −40°C
= 150°C
= −40°C
= 150°C
= −40°C
= 150°C
= −40°C
R
R
R
E
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
AS(R)
T
qJC
qJA
qJA
−
AS
L
J
≤ 175°C)
0.75
Min
380
390
384
1.4
1.6
1.0
0.9
1.1
1.3
1.2
1.3
1.6
1.7
1.6
Value
Value
25
25
25
17
10
1000
62.5
−
−
−
−
−
−
−
−
300
200
275
1.0
50
0.35
0.05
1.95
Typ
410
420
600
1.5
0.7
8.0
1.7
1.1
1.9
4.4
1.3
1.2
1.4
1.6
1.5
1.6
2.0
1.9
10
33
36
30
20
70
16
1000
Max
2.25
2.1*
1.7*
1.9*
2.3*
440
450
40*
15*
1.5
1.0
0.5
2.0
1.4
1.6
1.5
1.9
1.8
2.2
20
50
50
50
22
26
−
−
°C/W
Unit
Unit
mJ
mJ
°C
mV/°C
mA
mA
Unit
V
V
V
V
V
mA
k
W
DC
DC
DC
DC
DC
W
DC
DC