IRG4PSH71UD International Rectifier, IRG4PSH71UD Datasheet
IRG4PSH71UD
Specifications of IRG4PSH71UD
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IRG4PSH71UD Summary of contents
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... G n-channel Parameter ™ d 300 (0.063 in. (1.6mm) from case) Parameter Min. ––– ––– ––– ––– 20 (2.0) ––– 91686 IRG4PSH71UD UltraFast Copack IGBT 1200V CES V = 2.52V CE(on) typ 15V 50A SUPER - 247 Max ...
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... IRG4PSH71UD Electrical Characteristics @ T Parameter Collector-to-Emitter Breakdown Voltage V (BR)CES V Emitter-to-Collector Breakdown Voltage (BR)ECS ∆V /∆T Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Threshold Voltage temp. coefficient GE(th) J gfe Forward Transconductance I Zero Gate Voltage Collector Current ...
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... I=I RMS 1000.0 100 150°C 10.0 1.0 0 GE, Gate-to-Emitter Voltage (V) Fig Typical Transfer Characteristics IRG4PSH71UD Duty cycle : 50 125°C Tsink = 90°C Gate drive as specified Turn-on losses include effects of reverse recovery Power Dissipation = 58W 100 ) 25° 50V < ...
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... IRG4PSH71UD 100 100 Junction Temperature (°C) Fig Maximum Collector Current vs. Case Temperature 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 0.001 SINGLE PULSE 0.0001 ( THERMAL RESPONSE ) 1E-005 1E-006 1E-005 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 4 15V 15V 380µs PULSE WIDTH 3 ...
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... Fig Typical Gate Charge vs. 1000 5.0 Ω 15V 960V 100 10 1 -60 -40 - Fig Typical Switching Losses vs. IRG4PSH71UD 100 200 300 Q G, Total Gate Charge (nC) Gate-to-Emitter Voltage 140A 70A 35A 100 120 140 160 Junction Temperature (°C) Junction Temperature 400 ...
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... IRG4PSH71UD 5.0 Ω 150° 15V 960V 100 Collector Current (A) Fig Typical Switching Losses vs. Collector-to-Emitter Current 1000 Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 1000 20V 125° 100 120 140 160 100 150° 25°C 1 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 ...
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... 200V 125° 25°C 0 100 200 300 400 500 600 700 800 900 1000 µs) Fig Typical Stored Charge vs. di www.irf.com IRG4PSH71UD 100 140A 70A 35A 100 200 300 400 500 600 700 800 900 1000 Fig Typical Recovery Current vs. di ...
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... IRG4PSH71UD Same type device as D.U.T. 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on) GATE VOLTAGE D.U.T. 10% +Vg +Vg Vce 10% Ic Vcc 90 Vce tr td(on) t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining d(on 90% D.U.T. 10 d(on d(off) f Fig. 18b - Test Waveforms for Circuit of Fig ...
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... Figure 18e. Macro Waveforms for L 1000V 50V 6000µF 100V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT Figure 18a's D.U. Figure 20. Pulsed Collector Current IRG4PSH71UD Test Circuit L C Test Circuit 9 ...
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... IRG4PSH71UD Super-247™ (TO-274AA) Package Outline 16.10 [.632] A 15.10 [.595] 3.00 [.118 2.00 [.079] 20.80 [.818] 19.80 [.780 14.80 [.582] 4.25 [.167] 13.80 [.544] 3.85 [.152] 1.60 [.062] 3X 1.45 [.058] 5.45 [.215] 2X 0.25 [.010] Super-247™ (TO-274AA) Part Marking Information EXAMPLE: THIS IS AN IRFPS37N50A WITH ...