IRG4PH20KD International Rectifier, IRG4PH20KD Datasheet
IRG4PH20KD
Specifications of IRG4PH20KD
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IRG4PH20KD Summary of contents
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... JA Wt Weight www.irf.com G n-ch an nel TM ultrafast, 300 (0.063 in. (1.6mm) from case) Min. ––– ––– ––– ––– ––– PD- 91777 IRG4PH20KD Short Circuit Rated UltraFast IGBT 1200V CES V = 3.17V CE(on) typ 15V 5. TO-247AC Max ...
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... IRG4PH20KD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance fe I Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop FM I Gate-to-Emitter Leakage Current ...
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... GE 20µs PULSE WIDTH 0 Collector-to-Emitter Voltage (V) CE Fig Typical Output Characteristics www.irf.com 1 f, Frequency (KHz) (Load Current = I of fundamental) RMS 100 150 C = 15V Fig Typical Transfer Characteristics IRG4PH20KD ° ° C sink riv ifie tio ° ° 50V CC 5µs PULSE WIDTH ...
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... IRG4PH20KD 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 5 15V PULSE WIDTH 4.0 3.0 2.0 125 150 -60 -40 -20 ° ...
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... Fig Typical Switching Losses vs. Gate Resistance www.irf.com SHORTED 100 0 Fig Typical Gate Charge vs 0 -60 -40 -20 Fig Typical Switching Losses vs. IRG4PH20KD = 400V = 11A Total Gate Charge (nC) G Gate-to-Emitter Voltage = 50Ohm = 15V 800V = 960V 2 100 120 140 160 ° Junction Temperature ( Junction Temperature ...
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... IRG4PH20KD 4 5.0Ohm 150 C ° 960V 800V 15V 3.2 GE 2.4 1.6 0.8 0 Collector Current (A) C Fig Typical Switching Losses vs. Collector Current Fig Typical Forward Voltage Drop vs. Instantaneous Forward Current 6 100 ° ° ° 1.0 1.5 2.0 2.5 3.0 3.5 4 rward V olta ge Drop - V ...
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... 5 ° ° / /µs) f Fig Typical Reverse Recovery vs ° ° /µs) f Fig Typical Stored Charge vs. di www.irf.com Fig Typical Recovery Current vs ° ° /dt Fig Typical di f IRG4PH20KD . 2 ° ° /µ / /µs) f /dt vs. di /dt (rec ...
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... IRG4PH20KD 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining d(on) 8 Same ty pe device as D .U. . 90% 10 d(off) f Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Fig. 18d - , t r 90% ...
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... Figure 18e. Macro Waveforms for 50V µ Figure 19. Clamped Inductive Load Test Circuit www.irf.com Figure 18a's D.U. 960V Figure 20. Pulsed Collector Current IRG4PH20KD Test Circuit 960V @25°C C Test Circuit 9 ...
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... IRG4PH20KD Notes: Repetitive rating: V =20V; pulse width limited by maximum junction tem- GE perature (figure 20) V =80%( =20V, L=10µ CES GE Pulse width 80µs; duty factor Pulse width 5.0µs, single shot. Case Outline - TO-247AC (. (. (. (. (. (. (. (. (. (. (. EDEC 47AC (T O -3P) WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR CANADA: 7321 Victoria Park Ave ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...