IRG4BC30K-S International Rectifier, IRG4BC30K-S Datasheet

IGBT UFAST 600V 28A D2PAK

IRG4BC30K-S

Manufacturer Part Number
IRG4BC30K-S
Description
IGBT UFAST 600V 28A D2PAK
Manufacturer
International Rectifier
Datasheet

Specifications of IRG4BC30K-S

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 16A
Current - Collector (ic) (max)
28A
Power - Max
100W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Other names
*IRG4BC30K-S

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4BC30K-S
Manufacturer:
IR
Quantity:
5 000
Part Number:
IRG4BC30K-S
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRG4BC30K-S
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRG4BC30K-STRR
Manufacturer:
IR
Quantity:
255
Part Number:
IRG4BC30K-STRR
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRG4BC30K-STRR
Quantity:
1 000
• High short circuit rating optimized for motor control,
• Combines low conduction losses with high
• Latest generation design provides tighter parameter
Benefits
Thermal Resistance
Features
Features
• As a Freewheeling Diode we recommend our
• Latest generation 4 IGBTs offer highest power
• This part replaces the IRGBC30K-S and
Absolute Maximum Ratings
Features
Features
Features
V
I
I
I
I
t
V
E
P
P
T
T
R
R
R
Wt
V
www.irf.com
t
C
C
CM
LM
sc
HEXFRED
Diode and IGBT
distribution and higher efficiency than previous
generations
minimum EMI / Noise and switching losses in the
switching speed
sc
density motor controls possible
IRGBC30M-S devices
ARV
J
STG
CES
GE
D
D
GE
JA
@ T
@ T
CS
JC
@ T
@ T
=10µs, @360V V
= 15V
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
TM
ultrafast, ultrasoft recovery diodes for
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient ( PCB Mounted,steady-state)V
Weight
CE
(start), T
Parameter
Parameter
J
= 125°C,
G
n-channel
300 (0.063 in. (1.6mm) from case)
Typ.
1.44
–––
–––
0.5
C
E
10 lbf•in (1.1N•m)
-55 to +150
Max.
D P a k
600
±20
260
100
28
16
58
58
10
42
2
Short Circuit Rated
@V
V
CE(on) typ.
Max.
V
GE
UltraFast IGBT
–––
–––
1.2
40
CES
= 15V, I
= 600V
C
2.21V
Units
= 16A
4/24/2000
°C/W
Units
g
µs
mJ
°C
W
V
A
V
1

Related parts for IRG4BC30K-S

IRG4BC30K-S Summary of contents

Page 1

Features Features Features Features Features • High short circuit rating optimized for motor control, t =10µs, @360V V (start 15V GE • Combines low conduction losses with high switching speed • Latest generation design provides ...

Page 2

... IRG4BC30K-S Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage T V (BR)ECS Temperature Coeff. of Breakdown Voltage — (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th) J Forward Transconductance Zero Gate Voltage Collector Current CES ...

Page 3

... Fig Typical Output Characteristics www.irf.com uty c yc le: 50 125° 90°C s ink G ate drive as spec ified tio Frequency (kHz) (Load Current = I of fundamental) RMS 100 150 15V 0 Fig Typical Transfer Characteristics IRG4BC30K-S T ria 55° 50V CC 5µs PULSE WIDTH Gate-to-Emitter Voltage ( ...

Page 4

... IRG4BC30K 100 T , Case Temperature ( C Fig Maximum Collector Current vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02  SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 4 15V PULSE WIDTH 3.0 2.0 1.0 125 150 -60 -40 -20 ° ...

Page 5

... Gate Resistance (Ohm) G Fig Typical Switching Losses vs. Gate Resistance www.irf.com  SHORTED 100 0 Fig Typical Gate Charge vs 0.1 -60 -40 - Fig Typical Switching Losses vs. IRG4BC30K-S = 400V = 16A Total Gate Charge (nC) G Gate-to-Emitter Voltage = Ohm 23 = 15V = 480V  8. 100 120 140 160 ° Junction Temperature ( C ) ...

Page 6

... IRG4BC30K Ohm 150 C ° 480V 15V 3.2 GE 2.4 1.6 0.8 0 Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current Tape & Reel Information 2 D Pak (. (. 0. AX EIA SIO LIM EAS IST 100 SAFE OPERATING AREA 1 1 5 5 1 ...

Page 7

... Load Test Circuit 50V 1000V www.irf.com 480V .T. D river ff t=5µ IRG4BC30K-S 480V 25° 480µF 960V Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T 480V Fig. 14b - Switching Loss Waveforms 7 ...

Page 8

... IRG4BC30K-S Notes: Q Repetitive rating 20V, pulse width limited by GE max. junction temperature. ( See fig. 13b ) 80%( 20V 10µ CES GE (See fig. 13a) S Repetitive rating; pulse width limited by maximum junction temperature Pak Package Outline (. (. (. (. (. (. (. (. (. (. (. (. (. & & WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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