IRG4BC20SD-S International Rectifier, IRG4BC20SD-S Datasheet
IRG4BC20SD-S
Specifications of IRG4BC20SD-S
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IRG4BC20SD-S Summary of contents
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... Junction-to-Case - IGBT qJC R Junction-to-Case - Diode qJC R Junction-to-Ambient ( PCB Mounted,steady-state)* qJA Wt Weight * When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. www.irf.com IRG4BC20SD ultrafast, n-cha nnel PD -91794 Standard Speed IGBT 600V CES V = 1.4V CE(on) typ ...
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... IRG4BC20SD-S Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltageƒ (BR)CES Temperature Coeff. of Breakdown Voltage /DT DV (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage D D GE(th Forward Transconductance fe I Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop ...
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... V , Collector-to-Emitter Voltage (V) CE Fig Typical Output Characteristics www.irf.com 1 f, Frequency (KHz) Fig Typical Load Current vs. Frequency (Load Current = I of fundamental) RMS V = 15V GE 20µs PULSE WIDTH 3.0 4.0 IRG4BC20SD oth: D uty 5° °C sink riv ified ipation = 10 100 150 5µ ...
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... IRG4BC20SD Case Temperature ( C Fig Maximum Collector Current vs. Case Temperature 10 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 100 125 150 ° C) Fig Typical Collector-to-Emitter Voltage 0.001 t , Rectangular Pulse Duration (sec ...
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... Collector-to-Emitter Voltage 3 480V 15V GE ° 10A C 2.9 2.8 2 Gate Resistance Gate Resistance ( Fig Typical Switching Losses vs. Gate Resistance www.irf.com f = 1MHz C SHORTED 100 IRG4BC20SD 400V 10A Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Emitter Voltage 100 15V 480V 0.1 -60 -40 - Junction Temperature ( Fig ...
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... IRG4BC20SD-S 14 50W 150 C ° 480V 15V Collector Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current 100 150° 125° 25° 0.1 0.4 0.8 1.2 1.6 2.0 2 lta 100 V = 20V 125 SAFE OPERATING AREA ...
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... I = 16A F 200 I = 8.0A F 100 0 100 /µ Fig Typical Stored Charge vs. di www.irf.com 100 I = 16A 8. 1000 Fig Typical Recovery Current vs. di /dt f 10000 1000 I = 4.0A F 100 1000 /dt f IRG4BC20SD ° ° 16A 8 100 /µ ° ° 4. 8 16A F 100 /µ Fig Typical di /dt vs ...
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... IRG4BC20SD-S 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode td(on) t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Same type device as D .U. . 90% 10 d(on) r d(off) f Fig. 18b - + Ipk Ic t2 Vce Fig. 18d - , t d(on) r 10% t d(off d(on) ...
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... Figure 18e. Macro Waveforms for 1000V 50V 600 0µ F 100 V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Figure 18a's D.U. 480V IRG4BC20SD Test Circuit Figure 20. Pulsed Collector Current Test Circuit 480V @25° ...
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... IRG4BC20SD-S Repetitive rating: V =20V; pulse width limited by maximum junction temperature (figure 20 =80%( =20V, L=10µ CES GE Pulse width £ 80µs; duty factor £ 0.1%. Pulse width 5.0µs, single shot Pak Package Outline 10.54 (.415) 10.29 (.405) 1.40 (.055 1.78 (.070) 1 ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...