IRG4BC20UD International Rectifier, IRG4BC20UD Datasheet
IRG4BC20UD
Specifications of IRG4BC20UD
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IRG4BC20UD Summary of contents
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... Wt Weight www.irf.com G TM ultrafast, ultra- N-Channel 300 (0.063 in. (1.6mm) from case) Min. ––– ––– ––– ––– ––– IRG4BC20UD UltraFast CoPack IGBT 600V CES V = 1.85V CE(on) typ 15V 6. TO-220AB 600 13 6 ...
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... IRG4BC20UD Electrical Characteristics @ T V Collector-to-Emitter Breakdown Voltageƒ 600 (BR)CES ∆ Temperature Coeff. of Breakdown Voltage ––– 0.69 ––– V /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage ––– ...
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... Fig Typical Output Characteristics www.irf.com 1 f, Frequency (kHz) (Load Current = I of fundamental) RMS 100 T = 150° 15V 0 Fig Typical Transfer Characteristics A IRG4BC20UD Duty cycle: 50 125° 90°C sink Gate drive as specified Turn-on losses include effects of reverse recovery Power Dissipation = 13W 150° 25° 10V CC 5µ ...
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... IRG4BC20UD 100 T , Case Temperature (°C) C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 4 2 15V V = 15V GE GE 80µs PULSE WIDTH 2.2 1 ...
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... Fig Typical Switching Losses vs. Gate Resistance www.irf.com SHORTED 100 0 Fig Typical Gate Charge vs 0 -60 -40 Fig Typical Switching Losses vs. IRG4BC20UD = 400V = 6. Total Gate Charge (nC) g Gate-to-Emitter Voltage = 50 Ω = 15V = 480V I = 13A 6. 3. 100 120 140 160 T , Junction Temperature (°C) J Junction Temperature ...
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... IRG4BC20UD 1 Ω 150° 480V 15V GE 0.9 0.6 0.3 0 Collector-to-Emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 100 10 0.1 Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 1000 100 0 150° 125° 25° 0.4 0.8 1.2 1.6 2.0 2.4 2 ...
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... Fig Typical Reverse Recovery vs. di 500 V = 200V 125° 25°C J 400 300 I = 16A F 200 I = 8.0A F 100 0 100 di /dt - (A/µs) f Fig Typical Stored Charge vs. di www.irf.com IRG4BC20UD 100 V = 200V 125° 25° 8. 8. 1000 100 di /dt - (A/µs) Fig Typical Recovery Current vs. di /dt f 10000 V = 200V 125° ...
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... IRG4BC20UD Same type device as D.U.T. 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on) GATE VOLTAGE D.U.T. 10% +Vg +Vg Vce 10% Ic Vcc 90 Vce tr td(on) t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining d(on D.U. 90% 10 d(on d(off) f Fig. 18b - Test Waveforms for Circuit of Fig ...
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... Figure 18e. Macro Waveforms for L 1000V 50V 6000µF 100V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT Figure 18a's D.U. Figure 20. Pulsed Collector Current IRG4BC20UD Test Circuit L C Test Circuit 9 ...
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... IRG4BC20UD Notes: Repetitive rating: V =20V; pulse width limited by maximum junction tem- GE perature (figure 20) ‚ V =80%( =20V, L=10µ CES GE ƒ Pulse width ≤ 80µs; duty factor ≤ 0.1%. „ Pulse width 5.0µs, single shot. Case Outline — TO-220AB 10.54 (.415) 10 ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...