IRGPH40F International Rectifier, IRGPH40F Datasheet

IGBT FAST 1200V 29A TO-247AC

IRGPH40F

Manufacturer Part Number
IRGPH40F
Description
IGBT FAST 1200V 29A TO-247AC
Manufacturer
International Rectifier
Datasheet

Specifications of IRGPH40F

Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.3V @ 15V, 17A
Current - Collector (ic) (max)
29A
Power - Max
160W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRGPH40F
Manufacturer:
TOSHIBA
Quantity:
3 000
Part Number:
IRGPH40FD2
Manufacturer:
IR
Quantity:
12 500
INSULATED GATE BIPOLAR TRANSISTOR
Features
Thermal Resistance
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
Absolute Maximum Ratings
V
I
I
I
I
V
E
P
P
T
T
R
R
R
Wt
C
C
CM
LM
10kHz) See Fig. 1 for Current vs. Frequency curve
J
STG
CES
GE
ARV
D
D
@ T
@ T
JC
CS
JA
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Parameter
Parameter
C-273
G
n-channel
Min.
300 (0.063 in. (1.6mm) from case)
E
C
10 lbf•in (1.1N•m)
-55 to +150
Max.
1200
6 (0.21)
±20
160
IRGPH40F
Typ.
29
17
58
58
15
65
0.24
@V
Fast Speed IGBT
TO-247AC
V
V
GE
CE(sat)
CES
= 15V, I
Max.
= 1200V
0.77
PD - 9.764
40
3.3V
C
= 17A
Revision 0
Units
Units
g (oz)
°C/W
mJ
°C
W
V
A
V

Related parts for IRGPH40F

IRGPH40F Summary of contents

Page 1

... T Storage Temperature Range STG Soldering Temperature, for 10 sec. Mounting torque, 6- screw. Thermal Resistance Parameter R Junction-to-Case JC R Case-to-Sink, flat, greased surface CS R Junction-to-Ambient, typical socket mount JA Wt Weight IRGPH40F Fast Speed IGBT n-channel Max. 1200 ±20 15 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf• ...

Page 2

... IRGPH40F Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Emitter-to-Collector Breakdown Voltage (BR)ECS Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance fe I Zero Gate Voltage Collector Current CES I Gate-to-Emitter Leakage Current ...

Page 3

... G ate drive as spec ifie d Pow er D issipation = 35W quency ( fundamental; for triangular wave, I=I RMS 1000 100 0° ° 0.1 0. Fig Typical Transfer Characteristics C-275 IRGPH40F Tria ngular w ave: C lam p voltage: 80% of rated 100 ) µ ate- itter V o lta ...

Page 4

... IRGPH40F 100 ase Tem perature (° Fig Maximum Collector Current vs. Case Temperature 0.2 0 0.1 0 .05 SIN ( 0.0 2 0.0 1 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 0µ IDTH 4.0 3.0 2.0 -60 -40 -20 125 150 ture (°C ) Fig Collector-to-Emitter Voltage vs. ...

Page 5

... Fig Typical Capacitance vs. Collector-to-Emitter Voltage 25° ate R es istance ( ) G Fig Typical Switching Losses vs. Gate Resistance SHORTED Fig Typical Gate Charge vs. 100 0 -60 -40 W Fig Typical Switching Losses vs. C-277 IRGPH40F = tal Gate-to-Emitter Voltage = 8 - 100 120 140 160 ase Tem perature (° Case Temperature 5 0 ...

Page 6

... IRGPH40F 50° lle itte rre Fig Typical Switching Losses vs. Collector-to-Emitter Current Refer to Section D for the following: Appendix G: Section D - page D-9 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig ...

Page 7

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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