IRGPH50F International Rectifier, IRGPH50F Datasheet - Page 2

IGBT FAST 1200V 45A TO-247AC

IRGPH50F

Manufacturer Part Number
IRGPH50F
Description
IGBT FAST 1200V 45A TO-247AC
Manufacturer
International Rectifier
Datasheet

Specifications of IRGPH50F

Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.9V @ 15V, 25A
Current - Collector (ic) (max)
45A
Power - Max
200W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-

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Electrical Characteristics @ T
IRGPH50F
Switching Characteristics @ T
Notes:
V
V
V
V
g
I
I
Q
Q
Q
t
t
t
t
E
E
E
t
t
t
t
E
L
C
C
C
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
V
fe
E
V
(BR)CES
(BR)ECS
CE(on)
GE(th)
on
off
ts
ts
ies
oes
res
g
ge
gc
(BR)CES
GE(th)
limited by max. junction temperature.
( See fig. 13b )
V
Repetitive rating; V
R
CC
G
/ T
= 5.0 , ( See fig. 13a )
/ T
=80%(V
J
J
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CES
), V
Parameter
Parameter
GE
GE
=20V, pulse width
=20V, L=10µH,
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
Pulse width
Repetitive rating; pulse width limited
by maximum junction temperature.
1200
Min. Typ. Max. Units
Min. Typ. Max. Units
3.0
7.5
20
C-280
2400
320
240
590
500
140
1.3
2.1
2.5
2.4
-14
1.4
4.5
5.9
17
82
16
30
34
13
33
15
13
13
28
80µs; duty factor
1200
±100
250
100
480
330
2.9
5.5
8.2
21
43
mV/°C V
V/°C
µA
nA
mJ
mJ
nC
nH
pF
V
V
V
S
ns
ns
V
V
V
I
I
I
V
V
V
V
V
I
V
V
T
I
V
Energy losses include "tail"
See Fig. 9, 10, 11, 14
T
I
V
Energy losses include "tail"
See Fig. 10, 14
Measured 5mm from package
V
V
ƒ = 1.0MHz
C
C
C
C
C
C
GE
GE
GE
CE
CE
CE
GE
GE
GE
CC
GE
J
GE
J
GE
GE
CC
= 25A, T
= 25A
= 45A
= 25A
= 25A, V
= 25A, V
0.1%.
= 25°C
= 150°C,
= 0V, I
= 0V, I
= 0V, I
= V
= V
= 100V, I
= 0V, V
= 0V, V
= 15V, R
= 15V, R
= 0V
= 30V
= ±20V
= 400V
= 15V
GE
GE
, I
, I
J
C
C
C
CC
CC
CE
CE
C
C
= 150°C
Conditions
Conditions
= 250µA
= 1.0A
= 1.0mA
G
G
C
= 250µA
= 250µA
= 960V
= 960V
Pulse width 5.0µs,
= 1200V
= 1200V, T
single shot.
= 25A
= 5.0
= 5.0
See Fig. 8
See Fig. 7
See Fig. 2, 5
V
GE
J
= 150°C
= 15V

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