IRGPC40FD2 International Rectifier, IRGPC40FD2 Datasheet
IRGPC40FD2
Specifications of IRGPC40FD2
Available stocks
Related parts for IRGPC40FD2
IRGPC40FD2 Summary of contents
Page 1
... Soldering Temperature, for 10 sec. Mounting Torque, 6- Screw. Thermal Resistance Parameter R Junction-to-Case - IGBT JC R Junction-to-Case - Diode JC R Case-to-Sink, flat, greased surface CS R Junction-to-Ambient, typical socket mount JA Wt Weight IRGPC40FD2 Fast CoPack IGBT n-channel Max. 600 49 27 200 200 15 200 ± 20 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf• ...
Page 2
... IRGPC40FD2 Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Temp. Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temp. Coeff. of Threshold Voltage GE(th Forward Transconductance fe I Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop FM I Gate-to-Emitter Leakage Current ...
Page 3
... IDTH 1 0 ollector-to-E m itter V oltage ( Fig Typical Output Characteristics 1 f, Frequency (kHz) (Load Current = I of fundamental) RMS 1000 100 0° ° 0.1 0. Fig Typical Transfer Characteristics C-119 IRGPC40FD2 ° ° ifie ffe tio 5° µ ate- itter V o lta 100 20 ...
Page 4
... IRGPC40FD2 100 ase Tem perature (° Fig Maximum Collector Current vs. Case Temperature 0.2 0 0.1 0 .05 SIN ( 0.0 2 0.0 1 0.01 0.00001 0.0001 ectangular Pulse D uration (sec) Fig Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 3 µ 2.5 2.0 1.5 1.0 -60 -40 -20 0 125 150 ase Tem perature (° ...
Page 5
... R , Gate Resistance ( ) G Fig Typical Switching Losses vs. Gate Resistance SHORTED Fig Typical Gate Charge vs. 100 -60 - Fig Typical Switching Losses vs. C-121 IRGPC40FD2 = Total G ate C harge ( Gate-to-Emitter Voltage = 10 = 15V = 480V I = 54A 27A 14A C - 100 120 140 160 T , Case Temperature (°C) C Case Temperature ...
Page 6
... IRGPC40FD2 20 150° 480V CC 16 15V GE 12.0 8.0 4.0 0 Collector-to-Emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current 1000 100 100 150° 125° 25° 0.8 1.2 1.6 2.0 Forward Voltage Drop - V ...
Page 7
... Fig Typical Reverse Recovery vs. di 800 V = 200V 125° 25°C J 600 I = 30A F 400 I = 15A 5.0A F 200 0 100 di /dt - (A/µs) f Fig Typical Stored Charge vs. di IRGPC40FD2 100 V = 200V 125° 25° 15A 1000 100 di /dt - (A/µs) Fig Typical Recovery Current vs. di /dt f 1000 V = 200V 125° 25° ...
Page 8
... IRGPC40FD2 Same type device as D.U.T. 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on) GATE VOLTAGE D.U.T. 10% +Vg +Vg Vce 10% Ic Vcc 90 Vce tr td(on) t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining d(on) Refer to Section D for the following: Appendix D: Section D - page D-6 Fig ...
Page 9
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...