IXER60N120 IXYS, IXER60N120 Datasheet - Page 3

• Manufacturer Part Number: IXER60N120
• Description: IGBT NPT3 1200V 95A ISOPLUS247
• Manufacturer: IXYS

Specifications of IXER60N120

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 60A
• Current - Collector (ic) (max): 95A
• Power - Max: 375W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247™
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 95A
• Gate To Emitter Voltage (max): ±20V
• Package Type: ISOPLUS 247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 95
• Ic90, Tc=90°c, Igbt, (a): 60
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.7
• Tfi, Typ, Igbt, (ns): 30
• Eoff, Typ, Tj=125°c, Igbt, (mj): 4.8
• Rthjc, Max, Igbt, (°c/w): 0.33
• If, Tc=90°c, Diode, (a): -
• Rthjc, Max, Diode, (k/w): -
• Package Style: ISOPLUS247™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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I
I
C
C
120
100
160
120
A
80
60
40
20
A
80
40
0
Fig. 1 Typ. output characteristics
Fig. 3 Typ. transfer characteristics
0
0
4
T
VJ
V
CE
= 125°C
= 20 V
6
1
V GE = 17 V
8
2
T
VJ
= 25°C
10
15 V
V
V
CE
GE
3
13 V
T
12
VJ
= 25°C
V
V
11 V
9 V
4
14
I
V
C
GE
Fig. 2 Typ. output characteristics
Fig. 4
120
100
A
80
60
40
20
20
15
10
V
5
0
0
0
0
Typ. turn on gate charge
100
1
200
IXER 60N120
2
V GE = 17 V
300
T
VJ
V
CE
= 125°C
V
I
C
Q
CE
3
G
400
= 600 V
= 50 A
15 V 13 V
nC
11 V
V
9 V
3 - 4
500
4