IXSR35N120BD1 IXYS, IXSR35N120BD1 Datasheet
IXSR35N120BD1
Manufacturer Part Number
IXSR35N120BD1
Description
IGBT 1200V 70A SCSOA ISOPLUS247
Manufacturer
IXYS
Datasheet
1.IXSR35N120BD1.pdf
(2 pages)
Specifications of IXSR35N120BD1
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.6V @ 15V, 35A
Current - Collector (ic) (max)
70A
Power - Max
250W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
70
Ic90, Tc=90°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.6
Tfi, Typ, Igbt, (ns)
180
Eoff, Typ, Tj=125°c, Igbt, (mj)
5
Rthjc, Max, Igbt, (k/w)
0.5
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXSR35N120BD1
Manufacturer:
IR
Quantity:
30 000
IGBT with Diode
ISOPLUS 247
(Electrically Isolated Backside)
Short Circuit SOA Capability
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
t
(SCSOA)
P
T
T
T
V
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
Symbol
BV
V
I
I
V
IXYS reserves the right to change limits, test conditions and dimensions
© 2002 IXYS All rights reserved
CM
C25
C90
CES
GES
SC
J
JM
stg
CGR
GEM
C
ISOL
GE(th)
CE(sat)
CES
GES
Device must be heatsunk for high temperature measurements to avoid thermal runaway.
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 30 H
V
R
T
50/60 Hz, RMS
Test Conditions
I
I
V
V
V
I
C
C
C
J
J
C
C
C
C
GE
GE
G
CE
GE
CE
= 22
= 15 V, T
= 15 V, V
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 90 C
= 25 C, 1 ms
= 25 C
= 3 mA, V
= 250 A, V
= 0.8 • V
= 0 V
= 0 V, V
= I
T,
V
GE
non repetitive
VJ
GE
CE
= 15 V
CES
TM
GE
= 125 C, R
= 20 V
= 720 V, T
CE
= 0 V
t = 1 min leads-to housing
= V
IGBT
Diode
GE
GE
= 1 M
G
J
= 125 C
= 22
T
T
(T
J
J
J
= 25 C
= 150 C
= 25 C, unless otherwise specified)
IXSR 35N120BD1
1200
min.
Characteristic Values
3
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
I
typ.
CM
1200
1200
2500
= 90
140
250
150
150
300
20
30
70
30
CES
10
5
max.
100
3.6
6
1 mA
3 mA
V~
nA
W
W
V
V
V
V
A
A
A
A
V
V
V
C
C
C
C
g
s
ISOPLUS 247
G = Gate,
E = Emitter
Features
Applications
Advantages
* Patent pending
DCB Isolated mounting tab
Meets TO-247AD package outline
High current handling capability
Latest generation HDMOS
MOS Gate turn-on
- drive simplicity
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Easy assembly
High power density
V
I
V
t
C25
fi(typ)
E 153432
CES
CE(sat)
G
TM
C
C = Collector,
E
= 180 ns
= 1200 V
=
=
Isolated backside*
3.6 V
70 A
98741A (01/02)
TM
process
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IXSR35N120BD1 Summary of contents
Page 1
... CES GES CE(sat Device must be heatsunk for high temperature measurements to avoid thermal runaway. IXYS reserves the right to change limits, test conditions and dimensions © 2002 IXYS All rights reserved IXSR 35N120BD1 Maximum Ratings 1200 = 1 M 1200 140 = 0.8 V CES = 125 C 10 ...
Page 2
... V, - 100 -di/dt = 200 thJC Note 35A T IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max 3600 315 75 120 = 0 CES 49 ...