IXGX35N120BD1 IXYS, IXGX35N120BD1 Datasheet - Page 2

• Manufacturer Part Number: IXGX35N120BD1
• Description: IGBT 70A 1200V PLUS247
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGX35N120BD1

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.3V @ 15V, 35A
• Current - Collector (ic) (max): 70A
• Power - Max: 350W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: PLUS247™-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 70A
• Gate To Emitter Voltage (max): ±20V
• Package Type: PLUS 247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 70
• Ic90, Tc=90°c, Igbt, (a): 35
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.3
• Tfi, Typ, Tj=25°c, Igbt, (ns): 160
• Eoff, Typ, Tj=125°c, Igbt, (mj): 8
• Rthjc, Max, Igbt, (°c/w): 0.35
• If, Tj=110°c, Diode, (a): 35
• Rthjc, Max, Diode, (ºc/w): 0.65
• Package Style: PLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
Reverse Diode (FRED)
Symbol
V
I
t
R
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
Symbol
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
RM
d(on)
d(off)
d(on)
d(off)
rr
ri
fi
ri
fi
fs
off
on
off
F
thJC
thJC
thCK
ies
oes
res
g
ge
gc
Remarks: Switching times may
increase for V
higher T
Test Conditions
I
t ≤ 300 µs, duty cycle d ≤ 2 %, T
I
V
I
Test Conditions
I
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
V
I
Inductive load, T
I
V
Remarks: Switching times may
increase for V
higher T
Inductive load, T
I
V
C
C
F
F
F
C
C
CE
R
CE
CE
= I
= I
= 1 A; -di/dt = 200 A/µs; V
= I
= I
= I
= 540 V
= 25 V, V
= 0.8 V
= 0.8 V
C90
C90
C90
= I
C90
C90
, V
, V
, V
, V
, V
C90
J
J
GE
GE
; V
GE
GE
GE
or increased R
or increased R
CES
CES
= 0 V, -di
= 0 V, Pulse test,
= 15 V, V
= 15 V
= 15 V
CE
GE
, R
, R
CE
CE
= 10 V,
= 0 V, f = 1 MHz
(Clamp) > 0.8 • V
G
(Clamp) > 0.8 • V
G
J
J
= R
= R
= 25° ° ° ° ° C
= 125° ° ° ° ° C
F
CE
/dt = 480 A/µs
off
off
= 0.5 V
= 5 Ω
= 5 Ω
G
G
R
= 30 V T
(T
(T
CES
J
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
= 125°C
CES
CES
,
,
T
J
J
=100°C
= 25°C
IXGK 35N120B
IXGX 35N120B
min.
min.
30
Characteristic Values
Characteristic Values
4,835,592
4,850,072
4620
0.15
225
typ.
typ.
260
170
180
160
300
360
3.8
2.6
8.0
32
40
40
90
28
57
50
27
55
31
4,881,106
4,931,844
max.
max.
2.35
0.65 K/W
0.35 K/W
280
320
7.3 mJ
36
60
5,017,508
5,034,796
K/W
mJ
mJ
nC
nC
nC
n s
n s
pF
pF
pF
n s
n s
n s
n s
n s
n s
n s
n s
S
V
A
PLUS247
TO-264 AA Outline (IXGK)
5,049,961
5,063,307
Terminals:
IXGK
IXGX
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
Dim.
1
2
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
1
2
20.80
15.75
19.81
TM
Min.
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
25.91
19.81
20.32
Min.
Millimeter
5.45 BSC
4.82
2.54
2.00
1.12
2.39
2.90
0.53
0.00
0.00
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
5,187,117
Millimeter
5,237,481
Outline (IXGX)
5.46 BSC
21.34
16.13
20.32
Max.
35N120BD1
35N120BD1
26.16
19.96
20.83
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
Max.
5.13
2.89
2.10
1.42
2.69
3.09
0.83
0.25
0.25
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
5,486,715
5,381,025
Min.
1.020
Min. Max.
.190
.090
.075
.045
.075
.115
.024
.819
.620
.780
.150
.220 0.244
.170
.215 BSC
.780
.800
.190
.100
.079
.044
.094
.114
.021
.000
.000
.090
.125
.239
.330
.150
.070
.238
.062
Inches
.215 BSC
Inches
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170
.190
Max.
1.030
.202
.114
.083
.056
.106
.122
.033
.786
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072
6,306,728B1