IXGH40N120B2D1 IXYS, IXGH40N120B2D1 Datasheet - Page 7

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IXGH40N120B2D1

Manufacturer Part Number
IXGH40N120B2D1
Description
IGBT HI SPEED 1200V 75A TO-247
Manufacturer
IXYS
Datasheet

Specifications of IXGH40N120B2D1

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.5V @ 15V, 40A
Current - Collector (ic) (max)
75A
Power - Max
380W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
40
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.5
Tfi, Typ, Tj=25°c, Igbt, (ns)
140
Eoff, Typ, Tj=125°c, Igbt, (mj)
8.3
Rthjc, Max, Igbt, (°c/w)
0.33
If, Tj=110°c, Diode, (a)
25
Rthjc, Max, Diode, (ºc/w)
0.9
Package Style
TO-247
Other names
Q3206197
Fig. 21. Forward current I
Fig. 24. Dynamic parameters Q
Fig. 27. Transient thermal resistance junction to case
© 2009 IXYS CORPORATION, All RrightsRreserved
Z
I
0.001
F
K
thJC
0.01
K/W
f
2.0
1.5
1.0
0.5
0.0
0.1
A
0.00001
60
50
40
30
20
10
0
1
0
0
T
T
VJ
versus T
VJ
=100°C
=150°C
40
1
I
RM
Q
r
VJ
0.0001
80
2
T
F
VJ
versus V
T
V
120
VJ
F
=25°C
r
, I
°C
3
RM
0.001
V
F
160
t
rr
Q
1000
Fig. 22. Reverse recovery charge Q
Fig. 25. Recovery time t
r
800
600
400
200
nC
90
80
70
60
ns
0
100
0.01
0
T
V
VJ
R
= 100°C
= 300V
versus -di
200
I
I
I
F
F
F
400
= 60A
= 30A
= 15A
F
/dt
I
I
I
0.1
F
F
F
= 60A
= 30A
= 15A
-di
600
F
-di
/dt
T
V
rr
VJ
F
R
t
versus -di
/dt
= 100°C
= 300V
A/μs
s
800
A/μs
DSEP 29-06
1000
1000
1
F
r
/dt
I
V
RM
FR
Fig. 23. Peak reverse current I
30
25
20
15
10
20
15
10
Fig. 26. Peak forward voltage V
A
5
0
V
5
0
Constants for Z
0
0
1
2
3
i
T
V
T
I
t
F
VJ
fr
R
VJ
= 100°C
= 300V
= 100°C
= 30A
200
200
versus -di
t
fr
versus di
R
I
I
I
IXGH40N120B2D1
IXGT40N120B2D1
F
F
F
0.465
0.179
0.256
th
= 60A
= 30A
= 15A
400
400
( °C/W)
V
thJC
F
FR
/dt
F
600
600
/dt
di
calculation
-di
F
/dt
F
/dt
0.0052
0.0003
0.0397
A/μs
A/μs
800
800
t
i
(s)
RM
FR
1000
1000
and
1.00
0.75
0.50
0.25
0.00
μs
t
fr

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