IRGPS40B120UDP International Rectifier, IRGPS40B120UDP Datasheet - Page 9

IGBT W/DIODE 1200V 80A SUPER247

IRGPS40B120UDP

Manufacturer Part Number
IRGPS40B120UDP
Description
IGBT W/DIODE 1200V 80A SUPER247
Manufacturer
International Rectifier
Datasheet

Specifications of IRGPS40B120UDP

Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 50A
Current - Collector (ic) (max)
80A
Power - Max
595W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
Super-247-3 (Straight Leads)
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
80A
Gate To Emitter Voltage (max)
±20V
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRGPS40B120UDP

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0.001
0.01
0.01
0.1
0.1
10
10
1
1
1E-005
1E-005
D = 0.50
D = 0.50
Fig 25. Normalized Transient Thermal Impedance, Junction-to-Case (DIODE)
Fig 24. Normalized Transient Thermal Impedance, Junction-to-Case (IGBT)
0.05
0.01
0.02
0.05
0.01
0.02
0.10
0.10
0.20
0.20
0.0001
0.0001
SINGLE PULSE
( THERMAL RESPONSE )
SINGLE PULSE
( THERMAL RESPONSE )
0.001
t 1 , Rectangular Pulse Duration (sec)
t 1 , Rectangular Pulse Duration (sec)
0.001
0.01
IRGPS40B120UDP
0.01
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1
1
9
10
1

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