IXGH32N60BU1 IXYS, IXGH32N60BU1 Datasheet
IXGH32N60BU1
Specifications of IXGH32N60BU1
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IXGH32N60BU1 Summary of contents
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... 250 GE(th 0.8 • V CES CE CES GES CE(sat) C C90 GE © 2003 IXYS All rights reserved IXGH 32N60BU1 Maximum Ratings 600 = 1 M 600 120 = 0.8 V CES 200 -55 ... +150 150 -55 ... +150 300 1.13/10 6 Characteristic Values ( unless otherwise specified) J min. typ. max. 600 2.5 5 ...
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... CES 0 4.7 120 120 , CES 1.2 G 0.62 K/W 0.25 Characteristic Values ( unless otherwise specified) J min. typ. max. 1 125 C 150 4,835,592 4,881,106 4,850,072 4,931,844 IXGH32N60BU1 TO-247 AD Outline Dim. Millimeter n s Min. Max. A 4.7 5 2.2 2. 2.2 2 1.0 1 1.65 2. 2.87 3.12 1 ...
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... Fig. 2. Extended Output Characteristics 1.75 1.50 1.25 1.00 0. Fig. 4. Temperature Dependence of V 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0. -50 -25 Fig. 6. Temperature Dependence of BV G32N60B P1 IXGH32N60BU1 T = 25° 15V 13V J GE 11V Volts 15V I = 64A 32A 16A 100 125 ...
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... I . OFF C 100 10 1 0.1 100 125 150 D = Duty Cycle 0.001 0.01 Pulse Width - Seconds Fig. 11. Transient Thermal Resistance 4,835,592 4,881,106 4,850,072 4,931,844 IXGH32N60BU1 T = 125° 32A C E (ON) E (OFF Ohms G Fig. 8. Dependence of tfi and E OFF T = 125° 4.7Ω ...
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... F © 2003 IXYS All rights reserved 2.0 2.5 120 160 0 30A F max. 0.6 0.4 0.2 0.0 400 600 IXGH32N60BU1 Fig.13 Peak Forward Voltage V FR Forward Recovery Time 125° 37A 100 200 300 400 500 di /dt - A/µs F Fig.15 Reverse Recovery Chargee ...
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... IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 0.01 Pulse Width - Seconds 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXGH32N60BU1 0.1 5,049,961 5,187,117 5,486,715 6,306,728B1 5,063,307 5,237,481 5,381,025 1 ...